TLP624-2(F) Toshiba, TLP624-2(F) Datasheet - Page 24

PHOTOCOUPLER DUAL TRANS OUT 8DIP

TLP624-2(F)

Manufacturer Part Number
TLP624-2(F)
Description
PHOTOCOUPLER DUAL TRANS OUT 8DIP
Manufacturer
Toshiba
Datasheets

Specifications of TLP624-2(F)

Number Of Channels
2
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
100% @ 1mA
Current Transfer Ratio (max)
1200% @ 1mA
Voltage - Output
55V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
400mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
8-DIP (0.300", 7.62mm)
Configuration
2
Maximum Collector Emitter Voltage
55 V
Maximum Collector Emitter Saturation Voltage
200 mV (Typ)
Isolation Voltage
5000 Vrms
Current Transfer Ratio
1200 %
Maximum Forward Diode Voltage
1.3 V
Minimum Forward Diode Voltage
1 V
Maximum Collector Current
50 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 75 C
Minimum Operating Temperature
- 25 C
Maximum Input Diode Current
50 mA
Maximum Reverse Diode Voltage
5 V
Output Device
Transistor
Number Of Elements
2
Reverse Breakdown Voltage
5V
Forward Voltage
1.3V
Forward Current
50mA
Collector-emitter Voltage
55V
Package Type
PDIP
Collector Current (dc) (max)
50mA
Power Dissipation
150mW
Collector-emitter Saturation Voltage
0.4V
Pin Count
8
Mounting
Through Hole
Operating Temp Range
-25C to 75C
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP624-2F
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
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/
/
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Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC

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