IRG4RC10UTR International Rectifier, IRG4RC10UTR Datasheet

IGBT UFAST 600V 8.5A D-PAK

IRG4RC10UTR

Manufacturer Part Number
IRG4RC10UTR
Description
IGBT UFAST 600V 8.5A D-PAK
Manufacturer
International Rectifier
Datasheet
1.IRG4RC10UTRL.pdf (9 pages)

Specifications of IRG4RC10UTR

Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.6V @ 15V, 5A
Current - Collector (ic) (max)
8.5A
Power - Max
38W
Input Type
Standard
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
IRG4RC10UTRL
Manufacturer:
IR
Quantity:
9 000
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4RC10UTRLPBF
Quantity:
1 800
Company:
H&T Electronics H&T Electronics
Part Number:
IRG4RC10UTRPBF
Quantity:
9 700
INSULATED GATE BIPOLAR TRANSISTOR
Benefits
Absolute Maximum Ratings
Thermal Resistance
* When mounted on 1" square PCB (FR-4 or G-10 Material).
Features
Features
Features
Features
Features
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• UltraFast: Optimized for high operating
• Generation 4 IGBT design provides tighter
• Industry standard TO-252AA package
www.irf.com
R
R
Wt
V
I
I
I
I
V
E
P
P
T
T
For recommended footprint and soldering techniques refer to application note #AN-994
C
C
CM
LM
parameter distribution and higher efficiency than
kHz in resonant mode)
previous generation
J
STG
CES
GE
ARV
D
D
frequencies ( 8-40 kHz in hard switching, >200
JC
JA
@ T
@ T
@ T
@ T
C
C
C
C
= 25°C
= 100°C
= 25°C
= 100°C
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Weight
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current 
Clamped Inductive Load Current ‚
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy ƒ
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Parameter
Parameter
G
n-channel
300 (0.063 in. (1.6mm) from case )
0.3 (0.01)
Typ.
–––
–––
E
C
-55 to +150
IRG4RC10U
TO-252AA
Max.
UltraFast Speed IGBT
D-PAK
600
±20
110
8.5
5.0
34
34
38
15
@V
V
CE(on) typ.
Max.
V
GE
–––
3.3
50
CES
= 15V, I
PD - 91572A
= 600V
C
2.15V
= 5.0A
Units
°C/W
g (oz)
Units
W
mJ
°C
V
A
V
1
8/30/99

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IRG4RC10UTR Summary of contents

Page 1

INSULATED GATE BIPOLAR TRANSISTOR Features Features Features Features Features • UltraFast: Optimized for high operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode) • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than ...

Page 2

IRG4RC10U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage (BR)CES Emitter-to-Collector Breakdown Voltage „ V (BR)ECS Temperature Coeff. of Breakdown Voltage (BR)CES J V Collector-to-Emitter Saturation Voltage CE(ON) V Gate Threshold Voltage GE(th ...

Page 3

are w ave: 2 rate lta 1.0 Ide des 0.0 0.1 Fig Typical Load Current vs. Frequency 100 o T ...

Page 4

IRG4RC10U 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL ...

Page 5

1MHz ies res 400 oes ies 300 200 C oes 100 C res ...

Page 6

IRG4RC10U 1.0 100 R = 100Ohm 150 C ° 480V 15V 0.8 GE 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical ...

Page 7

Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50 5.46 (.2 15 ...

Page 8

IRG4RC10U Tape & Reel Information TO-252AA ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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