IRG4RC10UD International Rectifier, IRG4RC10UD Datasheet
IRG4RC10UD
Specifications of IRG4RC10UD
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IRG4RC10UD Summary of contents
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Features Features Features Features • UltraFast: Optimized for medium operating frequencies ( 8-40 kHz in hard switching, >200 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter ...
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... IRG4RC10UD Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown VoltageS (BR)CES Temperature Coeff. of Breakdown Voltage — (BR)CES J V Collector-to-Emitter Saturation Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th) J Forward Transconductance Zero Gate Voltage Collector Current CES V Diode Forward Voltage Drop FM I Gate-to-Emitter Leakage Current ...
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... Collector-to-Emitter Voltage (V) CE Fig Typical Output Characteristics www.irf.com 1 f, Frequency (KHz) (Load Current = I of fundamental) RMS 100 150 150 15V Fig Typical Transfer Characteristics IRG4RC10UD For both: D uty cy cle: 50 125° 90°C 55°C s ink G ate drive as specified Dis sip ation = W 1.4 10 100 50V CC 5µ ...
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... IRG4RC10UD 100 T , Case Temperature ( C Fig Maximum Collector Current vs. Case Temperature 0.50 1 0.20 0.10 0.05 0.02 SINGLE PULSE 0.01 0.1 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 5 15V PULSE WIDTH 4.0 3.0 2.0 1.0 125 150 -60 -40 -20 ° ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs Ohm 15V 480V CC 1 0.1 0.01 -60 -40 -20 90 100 Fig Typical Switching Losses vs. IRG4RC10UD = 400V = 5. Total Gate Charge (nC) G Gate-to-Emitter Voltage 100 5. 2 100 120 140 160 ° Junction Temperature ( Junction Temperature 16 5 ...
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... IRG4RC10UD 1.4 100 R = Ohm 150 C ° 480V 1 15V GE 1.0 0.8 0.6 0.4 0.2 0 Collector-to-emitter Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 0.1 Fig Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 100 SAFE OPERATING AREA 150° 125° 25° 0.0 1 ...
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... Fig Typical Reverse Recovery vs 25° 5° 8. 4. /dt - (A/µ Fig Typical Stored Charge vs. di www.irf.com ° 5° Fig Typical Recovery Current vs ° 5° 8. 4. /dt Fig Typical di f IRG4RC10UD /dt - (A/µ / /dt - (A/µ /dt vs. di /dt, (rec ...
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... IRG4RC10UD 430µF 80% of Vce Fig. 18a - Test Circuit for Measurement off(diode d(on Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining d(on) 8 Same ty pe device . d(off) f Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 18d - µ S ...
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... SIG VIC . D.U . D.U. 480V 2 2 45 50) 0.58 (. 35) 0.46 (.01 8) 6.45 (.24 5) 5.68 (. .42 (.41 0) 9 0.51 (. (.0 23 (.0 18 SIO & 82 ING 252 SIO 0.16 (. IRG4RC10UD 480V @25° LEAD ASSIGNMENTS GATE COLLECTOR 3 - EMITTER 4 - COLLECTOR 9 ...
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... IRG4RC10UD Q Repetitive rating: V =20V; pulse width limited by maximum junction temperature (figure 20 =80%( =20V, L=10µ CES GE S Pulse width 80µs; duty factor 0.1%. T Pulse width 5.0µs, single shot. Tape & Reel Information TO-252AA & WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 ...
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...