PESD5V0S1BA,115 NXP Semiconductors, PESD5V0S1BA,115 Datasheet - Page 4

• Manufacturer Part Number: PESD5V0S1BA,115
• Description: DIODE BIDIR ESD PROTECT SOD323
• Manufacturer: NXP Semiconductors

Specifications of PESD5V0S1BA,115

• Package / Case: SC-76, SOD-323, UMD2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 5.5V
• Power (watts): 130W
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 10 V
• Operating Voltage: 5 V
• Breakdown Voltage: 9.5 V
• Termination Style: SMD/SMT
• Peak Surge Current: 12 A
• Peak Pulse Power Dissipation: 130 W
• Capacitance: 35 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 1.35 (Max) mm W x 1.8 (Max) mm L
• Number Of Elements: 1
• Operating Temperature Classification: Military
• Reverse Breakdown Voltage: 5.5V
• Reverse Stand-off Voltage: 5V
• Leakage Current (max): 100nA
• Peak Pulse Current: 12A
• Test Current (it): 1mA
• Operating Temp Range: -65C to 150C
• Mounting: Surface Mount
• Pin Count: 2
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4053-2; 934058004115; PESD5V0S1BA T/R; PESD5V0S1BA T/R

NXP Semiconductors
PESD5V0S1BA_BB_BL_4
Product data sheet
Fig 1.
(%)
I
120
pp
80
40
0
0
8/20 s pulse waveform according to
IEC 61000-4-5
10
100 % I
e
t
pp
20
; 8 s
50 % I
30
pp
; 20 s
t ( s)
mle218
Rev. 04 — 20 August 2009
40
Low capacitance bidirectional ESD protection diodes
Fig 2.
100 %
10 %
90 %
PESD5V0S1BA/BB/BL
ElectroStatic Discharge (ESD) pulse waveform
according to IEC 61000-4-2
I
pp
t
r
30 ns
0.7 to 1 ns
60 ns
© NXP B.V. 2009. All rights reserved.
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