PESD12VU1UT,215 NXP Semiconductors, PESD12VU1UT,215 Datasheet - Page 8

DIODE ESD PROTECTION SOT23

PESD12VU1UT,215

Manufacturer Part Number
PESD12VU1UT,215
Description
DIODE ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD12VU1UT,215

Voltage - Reverse Standoff (typ)
12V
Voltage - Breakdown
14.2V
Power (watts)
200W
Polarization
Unidirectional
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Polarity
Unidirectional
Clamping Voltage
23 V
Operating Voltage
12 V
Breakdown Voltage
15 V
Termination Style
SMD/SMT
Peak Surge Current
5 A
Peak Pulse Power Dissipation
200 W
Capacitance
0.6 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
2.5 mm W x 3 mm L x 1.1 mm H
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-4026-2
934059104215
PESD12VU1UT T/R
PESD12VU1UT T/R
NXP Semiconductors
PESDXU1UT_SER_2
Product data sheet
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESDxU1UT as close to the input terminal or connector as possible.
2. The path length between the PESDxU1UT and the protected line should be
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all printed-circuit board conductive loops including power and ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer printed-circuit
minimized.
boards, use ground vias.
Rev. 02 — 20 August 2009
Ultra low capacitance ESD protection diode in SOT23 package
PESDxU1UT series
© NXP B.V. 2009. All rights reserved.
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