PESD24VS2UT,215 NXP Semiconductors, PESD24VS2UT,215 Datasheet - Page 2

DIODE ESD PROTECTION SOT23

PESD24VS2UT,215

Manufacturer Part Number
PESD24VS2UT,215
Description
DIODE ESD PROTECTION SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PESD24VS2UT,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Voltage - Reverse Standoff (typ)
24V
Voltage - Breakdown
26.5V
Power (watts)
160W
Polarization
2 Channel Array - Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Clamping Voltage
36 V
Operating Voltage
24 V
Breakdown Voltage
27 V
Termination Style
SMD/SMT
Peak Surge Current
3 A
Peak Pulse Power Dissipation
160 W
Capacitance
32 pF
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Dimensions
1.4 mm W x 3 mm L x 1.1 mm H
Number Of Elements
2
Operating Temperature Classification
Military
Reverse Breakdown Voltage
26.5V
Reverse Stand-off Voltage
24V
Leakage Current (max)
1uA
Peak Pulse Current
3A
Test Current (it)
5mA
Operating Temp Range
-65C to 150C
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-4038-2
934057612215
PESD24VS2UT T/R
PESD24VS2UT T/R
NXP Semiconductors
FEATURES
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: P
• Low clamping voltage: V
• Ultra-low reverse leakage current: I
• ESD protection > 23 kV
• IEC 61000-4-2; level 4 (ESD)
• IEC 61000-4-5 (surge); I
APPLICATIONS
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT23
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
MARKING
Note
1. * = p : made in Hong Kong.
2004 Apr 15
PESD3V3S2UT
PESD5V2S2UT
PESD12VS2UT
PESD15VS2UT
PESD24VS2UT
Double ESD protection diodes in SOT23
package
* = t : made in Malaysia.
* = W : made in China.
TYPE NUMBER
pp
(CL)R
pp
= 18 A at t
= 330 W at t
= 20 V at I
MARKING CODE
RM
p
< 700 nA
= 8/20 µs.
*U9
*U1
*U2
*U3
*U4
pp
p
= 8/20 µs
= 18 A
(1)
2
QUICK REFERENCE DATA
PINNING
V
C
SYMBOL
RWM
d
Fig.1 Simplified outline (SOT23) and symbol.
PIN
1
2
3
1
2
reverse stand-off
voltage
diode capacitance
V
f = 1 MHz
number of
protected lines
R
PARAMETER
= 0 V;
cathode 1
cathode 2
common anode
001aaa490
PESDxS2UT series
3
DESCRIPTION
3.3, 5.2, 12, 15
and 24
207, 152, 38, 32
and 23
2
1
2
Product data sheet
VALUE
sym022
3
V
pF
UNIT

Related parts for PESD24VS2UT,215