RSA6.1U5T108 Rohm Semiconductor, RSA6.1U5T108 Datasheet
首页 Circuit Protection TVS - Diodes RSA6.1U5T108
Manufacturer Part Number
RSA6.1U5T108
Description
TVS DIODE 30W 3V 2CH BI SMD-6
Manufacturer
Rohm Semiconductor
Specifications of RSA6.1U5T108
Voltage - Reverse Standoff (typ)
3V
Voltage - Breakdown
6.1V
Power (watts)
30W
Polarization
2 Channel Array - Bidirectional
Mounting Type
Surface Mount
Package / Case
SC-74-6
Smd6
Diode Case Style
No. Of Pins
6
Power Dissipation Pd
200mW
Svhc
No SVHC (18-Jun-2010)
Breakdown Voltage
6.1V
Capacitance Cd @ Vr Typ
200pF
Diode Type
TVS
Operating Temperature Range
-55°C To +150°C
Zener Voltage
6.65 V
Voltage Tolerance
8 %
Zener Current
1 uA
Power Dissipation
200 mW
Maximum Reverse Leakage Current
1 uA
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Forward Voltage Drop
1.25 V
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
RSA6.1U5T108TR
Available stocks
Part Number:
RSA6.1U5T108
Diodes
ESD Protection diode
RSA6.1U5
ESD Protection
1) Small mold type. (SMD6)
2) High reliability.
Silicon epitaxial planar
Application
Features
Construction
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Power dissipation
Peak Pulse Power-1(tp=10×1000us)
Peak Pulse Power-2(tp=10×1000us)
Junction temperature
Storage temperature
Zener voltage
Reverse current
Forward current
Junction capacitance
Parameter
Parameter
Symbol
V
Ct
V
I
R
Ｆ
z
3.2±0.1
4.0±0.1
External dimensions (Unit : mm)
0.3±0.1
Taping dimensions (Unit : mm)
Symbol
0.05
Min.
6.1
(4)
(3)
0.95
Tstg
Ppk
Ppk
-
-
-
各リードとも同寸法
Tj
2.9±0.2
1.9±0.2
P
2.0±0.05
Each lead has same dimension
(5)
(2)
0.95
Typ.
(6)
(1)
4.0±0.1
-
-
-
-
-55 to +150
φ1.55±0.1
0
JEITA : SC-74
JEDEC :S0T-457
Limits
ROHM : SMD6
200
200
150
1Pin Mark
30
Max.
1.25
200
7.2
1.1±
week code
0.8±0.1
0.06
1
0.15±0.1
0.2
0.1
φ1.05MIN
0～0.1
Unit
µA
pF
V
V
Lead size figure (Unit : mm)
m
mW
mW
Unit
℃
℃
I
V
IF=200mA
V
Structure
Z
W
=1mA
R
R
=3.0V
=0V , f=1MHz
SMD6
0.45
Conditions
Rev.B
RSA6.1U5
0.95
0.35
1 9
0.6
0.35
0.95
0.3±0.1
1.35±0.1
0.8MIN.
0.45
1/2
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RSA6.1U5T108 Summary of contents
Diodes ESD Protection diode RSA6.1U5 Application ESD Protection Features 1) Small mold type. (SMD6) 2) High reliability. Construction Silicon epitaxial planar Absolute maximum ratings (Ta=25°C) Parameter Power dissipation Peak Pulse Power-1(tp=10×1000us) Peak Pulse Power-2(tp=10×1000us) Junction temperature Storage temperature Electrical characteristics ...
Diodes Electrical characteristic curves (Ta=25°C) 10 Ta=25℃ 1 Ta=75℃ Ta=125℃ Ta=-25℃ 0.1 Ta=150℃ 0.01 0 .001 7.5 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS 6.9 Ta=25℃ IZ=1mA 6.8 n=30pcs 6.7 6.6 6.5 AVE:6.736V 6.4 Vz DISRESION MAP 1000 Rth(j-a) ...
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...
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