PESD24VL2BT,215 NXP Semiconductors, PESD24VL2BT,215 Datasheet - Page 8

• Manufacturer Part Number: PESD24VL2BT,215
• Description: DIODE ESD PROTECTION SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD24VL2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 24V
• Voltage - Breakdown: 25.4V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 40 V
• Operating Voltage: 24 V
• Breakdown Voltage: 27.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 11 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4035-2; 934058867215; PESD24VL2BT T/R; PESD24VL2BT T/R

NXP Semiconductors
PESDXL2BT_SER_2
Product data sheet
Fig 7.
I
RM(25 C)
I
RM
(1) PESD3V3L2BT, PESD5V0L2BT
10
10
1
1
100
PESD12VL2BT, PESD15VL2BT and PESD24VL2BT:
I
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
RM
< 20 nA; T
50
j
= 150 C
0
50
Low capacitance double bidirectional ESD protection diodes in SOT23
100
006aaa069
T
j
( C)
(1)
150
Rev. 02 — 25 August 2009
Fig 8.
V
CL
V
BR
V-I characteristics for a bidirectional ESD
protection diode
V
RWM
PESDxL2BT series
I
I
RM
PP
I
R
I
I
I
RM
R
PP
© NXP B.V. 2009. All rights reserved.
V
RWM
+
006aaa676
V
BR
V
8 of 14
CL