PESD15VL2BT,215 NXP Semiconductors, PESD15VL2BT,215 Datasheet - Page 6

• Manufacturer Part Number: PESD15VL2BT,215
• Description: DIODE DUAL BIESD PROT SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD15VL2BT,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Voltage - Reverse Standoff (typ): 15V
• Voltage - Breakdown: 17.1V
• Power (watts): 200W
• Polarization: 2 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 25 V
• Operating Voltage: 15 V
• Breakdown Voltage: 18.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 5 A
• Peak Pulse Power Dissipation: 200 W
• Capacitance: 16 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 2.5 mm W x 3 mm L x 1.1 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4028-2; 934058866215; PESD15VL2BT T/R; PESD15VL2BT T/R

NXP Semiconductors
PESDXL2BT_SER_2
Product data sheet
Table 8.
T
[1]
[2]
Symbol
r
dif
amb
Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
Measured from pin 1 to 3 or 2 to 3.
= 25 C unless otherwise specified.
Characteristics
Parameter
differential resistance
Low capacitance double bidirectional ESD protection diodes in SOT23
PESD3V3L2BT
PESD5V0L2BT
PESD12VL2BT
PESD15VL2BT
PESD24VL2BT
Rev. 02 — 25 August 2009
…continued
Conditions
I
R
= 1 mA
PESDxL2BT series
Min
-
-
-
-
-
Typ
-
-
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
400
80
200
225
300
Unit
6 of 14