RSA12LTE25 Rohm Semiconductor, RSA12LTE25 Datasheet - Page 2

• Manufacturer Part Number: RSA12LTE25
• Description: TVS DIODE 600W 12V UNI SOD-106
• Manufacturer: Rohm Semiconductor

Specifications of RSA12LTE25

• Voltage - Reverse Standoff (typ): 12V
• Voltage - Breakdown: 13.3V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-106
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: RSA12LTE25TR

Diodes
Electrical characteristic curves (Ta=25°C)
0.001
0.01
10000
14.5
14.4
14.3
14.2
14.1
0.1
1000
10
14
100
1
10
11
1
Ta=-25℃
0.1
Ta=25℃
Ta=75℃
12
Vz-Iz CHARACTERISTICS
Zz-Iz CHARACTERISTICS
13
ZENER VOLTAGE:Vz(V)
ZENER CURRENT(mA)
Vz DISRESION MAP
AVE:14.24V
14
15
1
16
17
Ta=125℃
Ta=25℃
n=30pcs
IZ=1mA
Ta=150℃
18
10
19
10000
0.001
1000
0.01
100
0.1
10
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
1000
100
1
1
0
0.1
10
1
0
0.001
1
2
Mounted on epoxy board
IM=10mA
0.01
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
Rth-t CHARACTERISTICS
3
1ms
300us
4
IR DISRESION MAP
AVE:0.81nA
0.1
time
5
TIME:t(s)
IF=0.5A
Ta=150℃
6
1
7
8
10
Ta=-25℃
Ta=25℃
Ta=125℃
9 10 11 12
Ta=75℃
Ta=25℃
VR=12V
n=30pcs
Rth(j-a)
Rth(j-c)
100
1000
0.1
10
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
30
25
20
15
10
5
0
2
1
0
1
2
VR-Ct CHARACTERISTICS
No break at 30kV
REVERSE VOLTAGE:VR(V)
3
ESD DISPERSION MAP
Ct DISRESION MAP
C=200pF
4
R=0Ω
5
AVE:1.856nF
6
7
RSA12L
No break at 30kV
8
9 10 11 12
R=1.5kΩ
C=100pF
f=1MHz
Ta=25℃
n=10pcs
f=1MHz
VR=0V
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