NUP1301,215 NXP Semiconductors, NUP1301,215 Datasheet - Page 6

• Manufacturer Part Number: NUP1301,215
• Description: IC DIODE ARRAY ESD SOT23-3
• Manufacturer: NXP Semiconductors

Specifications of NUP1301,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Power (watts): 220W
• Polarization: 2 Channel Array - Unidirectional
• Voltage - Breakdown: 100V
• Voltage - Reverse Standoff (typ): 80V
• Operating Voltage: 1.25 V
• Breakdown Voltage: 100 V
• Capacitance: 0.6 pF
• Termination Style: SMD/SMT
• Power Dissipation Pd: 250 mW
• Operating Temperature Range: - 55 C to + 155 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934063605215

NXP Semiconductors
NUP1301_1
Product data sheet
Fig 3.
Fig 5.
(mA)
( A)
I
I
(1) T
(2) T
(3) T
(4) T
(1) T
(2) T
(3) T
(4) T
10
10
10
10
10
10
R
F
10
10
10
10
10
1
1
3
2
1
2
1
2
3
4
5
0
0
Forward current as a function of forward
voltage; typical values
Reverse current as a function of reverse
voltage; typical values
amb
amb
amb
amb
amb
amb
amb
amb
= 150 C
= 85 C
= 25 C
= 40 C
= 150 C
= 85 C
= 25 C
= 40 C
0.2
20
0.4
(1)
40
(2)
0.6
(3)
(1)
(2)
(3)
(4)
0.8
(4)
60
1.0
80
006aab132
006aab133
1.2
V
V
R
F
(V)
(V)
100
1.4
Rev. 01 — 11 May 2009
Fig 4.
Fig 6.
I
FSM
(A)
(pF )
10
C
10
0.8
0.6
0.4
0.2
10
d
1
0
2
1
1
Based on square wave currents.
T
Non-repetitive peak forward current as a
function of pulse duration; typical values
T
Diode capacitance as a function of reverse
voltage; typical values
0
Ultra low capacitance ESD protection array
j
amb
= 25 C; prior to surge
= 25 C; f = 1 MHz
10
4
10
8
2
10
12
NUP1301
© NXP B.V. 2009. All rights reserved.
3
t
V
p
R
( s)
mbg704
mbg446
(V)
10
16
4
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