PTVS18VS1UR,115 NXP Semiconductors, PTVS18VS1UR,115 Datasheet - Page 6

TVS UNI-DIR 18V 400W SOD-123W

PTVS18VS1UR,115

Manufacturer Part Number
PTVS18VS1UR,115
Description
TVS UNI-DIR 18V 400W SOD-123W
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PTVS18VS1UR,115

Package / Case
SOD-123 Flat Leads
Voltage - Reverse Standoff (typ)
18V
Voltage - Breakdown
20V
Power (watts)
400W
Polarization
Unidirectional
Mounting Type
Surface Mount
Polarity
Unidirectional
Channels
1 Channel
Clamping Voltage
29.2 V
Operating Voltage
18 V
Breakdown Voltage
21 V
Peak Surge Current
13.7 A
Peak Pulse Power Dissipation
400 W
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Dimensions
1.9 mm W x 2.8 mm L
Number Of Elements
1
Package Type
SOD FlatPower
Operating Temperature Classification
Military
Reverse Breakdown Voltage
20V
Reverse Stand-off Voltage
18V
Leakage Current (max)
100nA
Peak Pulse Current
13.7A
Test Current (it)
1mA
Operating Temp Range
-55C to 150C
Mounting
Surface Mount
Pin Count
2
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934061356115
NXP Semiconductors
PTVSxS1UR_SER
Product data sheet
Fig 1.
Fig 3.
P
(W)
(%)
I
PPM
PP
(1) PTVS5V0S1UR to PTVS64VS1UR
(2) PTVS3V3S1UR
150
100
10
10
10
10
50
0
5
4
3
2
10
0
IEC 61643-321
T
Rated peak pulse power as a function of pulse duration; typical values
10/1000 μs pulse waveform according to
−1
amb
= 25 °C
100 % I
1.0
PP
; 10 μs
50 % I
2.0
1
PP
; 1000 μs
3.0
All information provided in this document is subject to legal disclaimers.
t
006aab319
p
(ms)
4.0
Rev. 3 — 10 January 2011
10
(1)
(2)
Fig 2.
P
PPM(25°C)
P
PPM
1.2
0.8
0.4
10
0
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
2
PTVSxS1UR series
400 W Transient Voltage Suppressor
50
10
100
3
t
p
150
(μs)
© NXP B.V. 2011. All rights reserved.
006aab418
T
006aab321
j
(°C)
200
10
4
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