PTVS64VP1UP,115 NXP Semiconductors, PTVS64VP1UP,115 Datasheet - Page 6

• Manufacturer Part Number: PTVS64VP1UP,115
• Description: TVS DIODE 64V 600W UNI SOD128
• Manufacturer: NXP Semiconductors
• Series: PTVSxP1UPr

Specifications of PTVS64VP1UP,115

• Package / Case: *
• Voltage - Reverse Standoff (typ): 64V
• Voltage - Breakdown: 71.1V
• Power (watts): 600W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 103 V
• Breakdown Voltage: 74.85 V
• Termination Style: SMD/SMT
• Peak Surge Current: 100 A
• Dimensions: 1.05 mm W x 1.05 mm L x 0.5 mm H
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-5136-2

NXP Semiconductors
PTVSXP1UP_SER
Product data sheet
Fig 1.
Fig 3.
P
(%)
(W)
I
PP
PPM
150
100
10
10
10
10
50
0
10
5
4
3
2
0
IEC 61643-321
T
Rated peak pulse power as a function of pulse
duration; typical values
10/1000 μs pulse waveform according to
−1
amb
= 25 °C
100 % I
1
1.0
PP
; 10 μs
10
50 % I
2.0
PP
; 1000 μs
10
2
3.0
10
All information provided in this document is subject to legal disclaimers.
t
006aab319
3
p
006aac172
t
(ms)
p
(μs)
10
4.0
Rev. 2 — 6 January 2011
4
Fig 2.
Fig 4.
P
PPM(25°C)
P
PPM
(pF)
C
(1) PTVS5V0P1UP
(2) PTVS12VP1UP
(3) PTVS24VP1UP
(4) PTVS64VP1UP
d
10
10
10
1.2
0.8
0.4
10
0
4
3
2
0
Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
1
T
Diode capacitance as a function of reverse
voltage; typical values
amb
= 25 °C; f = 1 MHz
PTVSxP1UP series
600 W Transient Voltage Suppressor
50
(1)
100
10
(2)
(3)
V
150
R
(V)
© NXP B.V. 2011. All rights reserved.
T
(4)
006aab321
006aac173
j
(°C)
200
10
2
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