PESD5V0L7BAS,118 NXP Semiconductors, PESD5V0L7BAS,118 Datasheet - Page 5

• Manufacturer Part Number: PESD5V0L7BAS,118
• Description: DIODE ARRAY 7FOLD BIDIRECT
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PESD5V0L7BAS,118

• Package / Case: 8-TSSOP
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 7.2V
• Power (watts): 35W
• Polarization: 7 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Polarity: Bidirectional
• Clamping Voltage: 17 V
• Operating Voltage: 5 V
• Breakdown Voltage: 7.2 V
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 35 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 3.1(Max) mm W x 3.1(Max) mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057922118; PESD5V0L7BAS /T3; PESD5V0L7BAS /T3; Q2436459

NXP Semiconductors
PESD5V0L7BAS_BS
Product data sheet
Fig 3.
Fig 5.
P
(pF)
(W)
C
PP
10
d
10
1
9
8
7
6
2
1
T
Peak pulse power as a function of exponential
pulse duration t
0
T
Diode capacitance as a function of reverse
voltage; typical values
amb
amb
= 25 C
= 25 C; f = 1 MHz
1
10
2
p
; typical values
10
2
3
10
3
All information provided in this document is subject to legal disclaimers.
4
001aaa192
t
001aaa142
p
V
(μs)
R
PESD5V0L7BAS; PESD5V0L7BS
Low capacitance 7-fold bidirectional ESD protection diode arrays
(V)
10
5
Rev. 4 — 23 June 2010
4
Fig 4.
Fig 6.
P
I
RM(25°C)
PP(25°C)
P
I
PP
RM
1.2
0.8
0.4
10
1
0
−100
0
0
Relative variation of peak pulse power as a
function of junction temperature; typical
values
Relative variation of reverse leakage current
as a function of junction temperature; typical
values
−50
50
0
100
50
150
© NXP B.V. 2010. All rights reserved.
100
001aaa193
T
001aaa143
j
T
(°C)
j
(°C)
200
150
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