IP4284CZ10-TB,115 NXP Semiconductors, IP4284CZ10-TB,115 Datasheet - Page 3

• Manufacturer Part Number: IP4284CZ10-TB,115
• Description: TVS DIODE 5.5V 4CH BI SOT1059-1
• Manufacturer: NXP Semiconductors

Specifications of IP4284CZ10-TB,115

• Package / Case: *
• Voltage - Reverse Standoff (typ): 5.5V
• Voltage - Breakdown: 6V
• Polarization: 4 Channel Array - Bidirectional
• Mounting Type: Surface Mount
• Clamping Voltage: 8 V
• Channels: 4 Channels
• Breakdown Voltage: 9 V
• Capacitance: 0.5 pF
• Termination Style: Solder Tail
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5134-2

NXP Semiconductors
4. Limiting values
5. Characteristics
IP4284CZ10-TB_TT_2
Product data sheet
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
Table 4.
T
[1]
[2]
[3]
[4]
Symbol
V
V
T
T
Symbol
V
I
V
C
ΔC
C
R
V
LRzd
amb
amb
stg
I
ESD
BRzd
F
CL(ch)trt(pos)
ch(TMDS)
ch(mutual)
dyn
ch(TMDS)
All pins to ground.
This parameter is guaranteed by design.
Between signal pin and pin n.c.
Human Body Model (HBM) according to JESD22-A-J114D.
According to IEC 61000-4-5 and IEC 61000-4-9.
= 25
°
C unless otherwise specified.
Limiting values
Characteristics
Parameter
input voltage
electrostatic discharge
voltage
ambient temperature
storage temperature
Parameter
Zener diode
breakdown voltage
Zener diode reverse
leakage current
forward voltage
TMDS channel
capacitance
TMDS channel
capacitance difference
mutual channel
capacitance
dynamic resistance
positive transient channel
clamping voltage
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 1 April 2010
Conditions
IEC 61000-4-2, level 4;
contact discharge
Conditions
I
per TMDS channel;
V
f = 1 MHz;
V
f = 1 MHz;
V
f = 1 MHz;
V
I = 1 A
V
test
I
bias
bias
bias
ESD
ESD protection for ultra high-speed interfaces
positive transient
negative transient
= 3.0 V
= 1 mA
= 2.5 V
= 2.5 V
= 2.5 V
= 8 kV
IP4284CZ10-TB/TT
[1][2]
[1]
[1]
[1]
[4]
[3]
-
Min
−0.5
-
−40
−55
Min
6
-
0.4
-
-
-
-
-
Typ
-
-
0.7
0.5
0.05
0.07
1
1
8
© NXP B.V. 2010. All rights reserved.
Max
+5.5
±8
+85
+125
Max
9
1
-
0.7
-
-
-
-
-
Unit
V
kV
°C
°C
Unit
V
μA
V
pF
pF
pF
Ω
Ω
V
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