BZA100,118 NXP Semiconductors, BZA100,118 Datasheet - Page 4

• Manufacturer Part Number: BZA100,118
• Description: TVS ZENER 6.8V 20-SOIC
• Manufacturer: NXP Semiconductors

Specifications of BZA100,118

• Package / Case: 20-SOIC (7.5mm Width)
• Voltage - Reverse Standoff (typ): 5.25V
• Voltage - Breakdown: 6.4V
• Power (watts): 27.5W
• Polarization: 18 Channel Array - Unidirectional
• Mounting Type: Surface Mount
• Polarity: Unidirectional
• Clamping Voltage: 11 V
• Operating Voltage: 7.2 V
• Termination Style: SMD/SMT
• Peak Surge Current: 2.5 A
• Peak Pulse Power Dissipation: 1.6 W
• Capacitance: 120 pF
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Dimensions: 7.6 mm W x 13 mm L x 2.65 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934034860118; BZA100 /T3; BZA100 /T3

NXP Semiconductors
GRAPHICAL DATA
1997 Dec 02
handbook, halfpage
handbook, halfpage
18-fold ESD transient voltage suppressor
P
V
Fig.4
ZSM
ZSM
P ZSM
(W)
I ZSM
10
(A)
Fig.2
10
= V
is the non-repetitive peak reverse voltage at I
10
10
−1
10
10
1
1
2
ZSM
−1
−1
Maximum non-repetitive peak reverse power
dissipation as a function of pulse duration
(square pulse).
× I
Maximum non-repetitive peak reverse
current as a function of pulse time.
ZSM
.
1
1
10
10
10
10
2
2
ZSM
t p (ms)
t p (ms)
MBG394
MBG395
.
10
10
3
3
4
handbook, halfpage
handbook, halfpage
T
j
All diodes loaded.
= 25 °C; f = 1 MHz.
Fig.5
P tot
(W)
(pF)
C d
100
2.4
1.6
0.8
80
60
40
0
0
0
Diode capacitance as a function of reverse
voltage; typical values.
Fig.3 Power derating curve.
50
2
100
4
Product data sheet
V R (V)
T s (
o
BZA100
MBG393
C)
MBG392
150
6