ESD9B3.3ST5G ON Semiconductor, ESD9B3.3ST5G Datasheet - Page 2

• Manufacturer Part Number: ESD9B3.3ST5G
• Description: TVS ESD BIDIRECT 300MW SOD-923
• Manufacturer: ON Semiconductor

Specifications of ESD9B3.3ST5G

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5V
• Power (watts): 300mW
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Polarity: Bidirectional
• Clamping Voltage: 10.5 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5 V
• Termination Style: SMD/SMT
• Capacitance: 15 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.6 mm W x 0.8 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

* Rotated 270°.
2. V
3. For test procedure see Figures 3 and 4 and Application Note AND8307/D.
4. Surge current waveforms per Figure 5.
ELECTRICAL CHARACTERISTICS
(T
ELECTRICAL CHARACTERISTICS
ESD9B3.3ST5G
Symbol
A
V
V
= 25°C unless otherwise noted)
I
RWM
V
PP
I
I
C
BR
BR
R
T
C
Device
Figure 1. ESD Clamping Voltage Screenshot
is measured with a pulse test current I
Positive 8 kV Contact per IEC61000−4−2
Capacitance @ V
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V
Breakdown Voltage @ I
Test Current
Marking
Device
2*
R
Parameter
= 0 V and f = 1.0 MHz
V
PP
Max
RWM
(V)
3.3
T
(T
@ V
A
I
R
T
Max
= 25°C unless otherwise noted)
1.0
(mA)
at an ambient temperature of 25°C.
RWM
RWM
Min
V
5.0
http://onsemi.com
BR
(Note 2)
(V) @ I
Max
7.0
2
T
mA
1.0
I
T
Figure 2. ESD Clamping Voltage Screenshot
Negative 8 kV Contact per IEC61000−4−2
C (pF)
Typ
V
15
C
V
BR
Bi−Directional TVS
Per IEC61000−4−2
V
Figures 1 and 2
RWM
See Below
(Note 3)
I
PP
I
I
R
T
V
C
I
I
I
I
R
T
PP
V
RWM
V
V
BR
Max Per 8 x 20 ms
C
(V) @ I
V
(Note 4)
C
V
10.5
PP
= 1 A