ESD9B3.3ST5G ON Semiconductor, ESD9B3.3ST5G Datasheet - Page 3

• Manufacturer Part Number: ESD9B3.3ST5G
• Description: TVS ESD BIDIRECT 300MW SOD-923
• Manufacturer: ON Semiconductor

Specifications of ESD9B3.3ST5G

• Voltage - Reverse Standoff (typ): 3.3V
• Voltage - Breakdown: 5V
• Power (watts): 300mW
• Polarization: Bidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-923
• Polarity: Bidirectional
• Clamping Voltage: 10.5 V
• Operating Voltage: 3.3 V
• Breakdown Voltage: 5 V
• Termination Style: SMD/SMT
• Capacitance: 15 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 0.6 mm W x 0.8 mm L
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
IEC 61000−4−2 Spec.
Level
For sensitive circuit elements it is important to limit the
1
2
3
4
ESD Gun
Voltage
Test
(kV)
2
4
6
8
First Peak
Current
22.5
(A)
7.5
15
30
TVS
Current at
30 ns (A)
100
90
80
70
60
50
40
30
20
10
0
12
16
4
8
0
Cable
t
50 W
Figure 4. Diagram of ESD Test Setup
r
t
Figure 5. 8 X 20 ms Pulse Waveform
P
Figure 3. IEC61000−4−2 Spec
Current at
60 ns (A)
PEAK VALUE I
20
2
4
6
8
http://onsemi.com
Oscilloscope
HALF VALUE I
50 W
t, TIME (ms)
3
RSM
PULSE WIDTH (t
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
40
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
@ 8 ms
100%
I
peak
90%
10%
I @ 30 ns
I @ 60 ns
RSM
/2 @ 20 ms
IEC61000−4−2 Waveform
P
) IS DEFINED
60
t
P
= 0.7 ns to 1 ns
80