DSPIC30F5013-30I/PT Microchip Technology, DSPIC30F5013-30I/PT Datasheet - Page 56

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DSPIC30F5013-30I/PT

Manufacturer Part Number
DSPIC30F5013-30I/PT
Description
IC DSPIC MCU/DSP 66K 80TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr

Specifications of DSPIC30F5013-30I/PT

Core Processor
dsPIC
Core Size
16-Bit
Speed
30 MIPs
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
AC'97, Brown-out Detect/Reset, I²S, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
66KB (22K x 24)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
4K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
80-TFQFP
Core Frequency
40MHz
Core Supply Voltage
5.5V
Embedded Interface Type
CAN, I2C, SPI, UART
No. Of I/o's
68
Flash Memory Size
66KB
Supply Voltage Range
2.5V To 5.5V
Package
80TQFP
Device Core
dsPIC
Family Name
dsPIC30
Maximum Speed
30 MHz
Operating Supply Voltage
2.5|3.3|5 V
Data Bus Width
16 Bit
Number Of Programmable I/os
68
Interface Type
CAN/I2C/SPI/UART
On-chip Adc
16-chx12-bit
Number Of Timers
5
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DM300024 - KIT DEMO DSPICDEM 1.1XLT80PT3 - SOCKET TRAN ICE 80MQFP/TQFPAC164320 - MODULE SKT MPLAB PM3 80TQFPDM300004-2 - BOARD DEMO DSPICDEM.NET 2DM300004-1 - BOARD DEMO DSPICDEM.NET 1AC30F007 - MODULE SKT FOR DSPIC30F 80TQFPDV164005 - KIT ICD2 SIMPLE SUIT W/USB CABLE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
DSPIC30F501330IPT

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
DSPIC30F5013-30I/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
dsPIC30F5011/5013
7.3.2
To write a block of data EEPROM, write to all sixteen
latches first, and then set the NVMCON register and
program the block.
EXAMPLE 7-5:
7.4
Depending on the application, good programming
practice may dictate that the value written to the mem-
ory should be verified against the original value. This
should be used in applications where excessive writes
can stress bits near the specification limit.
DS70116J-page 56
MOV
MOV
MOV
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
TBLWTL
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
Write Verify
WRITING A BLOCK OF DATA
EEPROM
#LOW_ADDR_WORD,W0
#HIGH_ADDR_WORD,W1
W1
#data1,W2
W2
#data2,W2
W2
#data3,W2
W2
#data4,W2
W2
#data5,W2
W2
#data6,W2
W2
#data7,W2
W2
#data8,W2
W2
#data9,W2
W2
#data10,W2
W2
#data11,W2
W2
#data12,W2
W2
#data13,W2
W2
#data14,W2
W2
#data15,W2
W2
#data16,W2
W2
#0x400A,W0
W0
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
,
TBLPAG
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
[ W0]++
NVMCON
NVMKEY
NVMKEY
DATA EEPROM BLOCK WRITE
; Init pointer
; Get 1st data
; write data
; Get 2nd data
; write data
; Get 3rd data
; write data
; Get 4th data
; write data
; Get 5th data
; write data
; Get 6th data
; write data
; Get 7th data
; write data
; Get 8th data
; write data
; Get 9th data
; write data
; Get 10th data
; write data
; Get 11th data
; write data
; Get 12th data
; write data
; Get 13th data
; write data
; Get 14th data
; write data
; Get 15th data
; write data
; Get 16th data
; write data. The NVMADR captures last table access address.
; Select data EEPROM for multi word op
; Operate Key to allow program operation
; Block all interrupts with priority <7 for next 5 instructions
; Write the 0x55 key
; Write the 0xAA key
; Start write cycle
7.5
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been built-in. On power-up, the WREN bit is cleared,
and the Power-up Timer prevents EEPROM write.
The write initiate sequence and the WREN bit together
help prevent an accidental write during brown-out,
power glitch or software malfunction.
Protection Against Spurious Write
© 2011 Microchip Technology Inc.

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