MB95F118JWPMC-GE1 Fujitsu Semiconductor America Inc, MB95F118JWPMC-GE1 Datasheet - Page 61
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MB95F118JWPMC-GE1
Manufacturer Part Number
MB95F118JWPMC-GE1
Description
IC MCU 60K FLASH 2KB RAM 52LQFP
Manufacturer
Fujitsu Semiconductor America Inc
Series
F²MC MB95110Mr
Datasheet
1.MB95F118JWPMC-GE1.pdf
(76 pages)
Specifications of MB95F118JWPMC-GE1
Core Processor
F²MC-8FX
Core Size
8-Bit
Speed
16MHz
Connectivity
I²C, LIN, SIO, UART/USART
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
39
Program Memory Size
60KB (60K x 8)
Program Memory Type
FLASH
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.4 V ~ 5.5 V
Data Converters
A/D 8x8/10b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
52-LQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Other names
865-1071
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MB95F118JWPMC-GE1
Manufacturer:
AD
Quantity:
1 000
Company:
Part Number:
MB95F118JWPMC-GE1
Manufacturer:
Fujitsu Semiconductor America Inc
Quantity:
10 000
6. Flash Memory Program/Erase Characteristics
*1 : T
*2 : T
*3 : This value comes from the technology qualification (using Arrhenius equation to translate high temperature
Sector erase time
(4 Kbytes sector)
Sector erase time
(16 Kbytes sector)
Byte programming time
Program/erase cycle
Power supply voltage at
program/erase
Flash memory data
retention time
measurements into normalized value at +85 °C) .
A
A
= + 25 °C, V
= + 85 °C, V
Parameter
CC
CC
= 5.0 V, 10000 cycles
= 4.5 V, 10000 cycles
Condi-
tions
⎯
10000
20*
Min
4.5
⎯
⎯
⎯
3
Value
0.2*
0.5*
Typ
32
⎯
⎯
⎯
1
1
3600
0.5*
7.5*
Max
5.5
⎯
⎯
2
2
cycle
Unit
year Average T
µs
V
s
s
MB95110M Series
Excludes 00
erasure.
Excludes 00
erasure.
Excludes system-level overhead.
A
= +85 °C
H
H
Remarks
programming prior
programming prior
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