STM32F100RBH6B STMicroelectronics, STM32F100RBH6B Datasheet - Page 56
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STM32F100RBH6B
Manufacturer Part Number
STM32F100RBH6B
Description
MCU 32BIT ARM 128K FLASH 64LQFP
Manufacturer
STMicroelectronics
Series
STM32r
Datasheet
1.STM32F100R4T6B.pdf
(87 pages)
Specifications of STM32F100RBH6B
Core Processor
ARM® Cortex-M3™
Core Size
32-Bit
Speed
24MHz
Connectivity
I²C, IrDA, LIN, SPI, UART/USART
Peripherals
DMA, PDR, POR, PVD, PWM, Temp Sensor, WDT
Number Of I /o
51
Program Memory Size
128KB (128K x 8)
Program Memory Type
FLASH
Ram Size
8K x 8
Voltage - Supply (vcc/vdd)
2 V ~ 3.6 V
Data Converters
A/D 16x12b; D/A 2x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-LQFP
Processor Series
STM32F100x
Core
ARM Cortex M3
Data Bus Width
32 bit
Data Ram Size
8 KB
Interface Type
I2C, SPI, USART
Maximum Clock Frequency
24 MHz
Number Of Programmable I/os
51
Number Of Timers
6
Operating Supply Voltage
2 V to 3.6 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWARM, EWARM-BL, MDK-ARM, RL-ARM, ULINK2
Development Tools By Supplier
STM32100B-EVAL
Minimum Operating Temperature
- 40 C
On-chip Adc
12 bit, 16 Channel
On-chip Dac
12 bit, 2 Channel
For Use With
STM32100B-EVAL - EVAL BOARD FOR STM32F100VBT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
497-10495
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STM32F100RBH6B
Manufacturer:
STMicroelectronics
Quantity:
10 000
Company:
Part Number:
STM32F100RBH6BTR
Manufacturer:
STMicroelectronics
Quantity:
10 000
Electrical characteristics
5.3.13
Table 34.
1. FT = 5V tolerant. To sustain a voltage higher than V
2. Hysteresis voltage between Schmitt trigger switching levels. Guaranteed by design, not tested in production.
3. With a minimum of 100 mV.
4. Leakage could be higher than max. if negative current is injected on adjacent pins.
5. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This
56/87
Symbol
V
R
R
C
V
V
I
PMOS/NMOS contribution
lkg
hys
PU
PD
IH
IO
IL
Standard I/O input low
level voltage
I/O FT
level voltage
Standard I/O input
high level voltage
I/O FT
level voltage
Standard I/O Schmitt
trigger voltage
hysteresis
I/O FT Schmitt trigger
voltage hysteresis
Input leakage
current
Weak pull-up
equivalent resistor
Weak pull-down
equivalent resistor
I/O pin capacitance
I/O port characteristics
General input/output characteristics
Unless otherwise specified, the parameters given in
performed under the conditions summarized in
compliant.
I/O static characteristics
All I/Os are CMOS and TTL compliant (no software configuration required). Their
characteristics cover more than the strict CMOS-technology or TTL parameters. The
coverage of these requirements is shown in
in
Parameter
Figure 24
(1)
(1)
(4)
input low
input high
(2)
to the series resistance is minimum
and
(2)
(5)
(5)
Figure 25
V
Standard I/Os
SS
Conditions
V
V
V
V
V
DD
DD
≤
I/O FT
IN
IN
IN
V
=
=
= 5 V
IN
>
≤
V
V
2 V
2 V
for 5 V tolerant I/Os.
STM32F100x4, STM32F100x6, STM32F100x8, STM32F100xB
≤
SS
DD
V
DD
Doc ID 16455 Rev 6
DD
+0.3 the internal pull-up/pull-down resistors must be disabled.
0.41*(V
0.42*(V
(~10% order)
5% V
DD
–0.3
–0.3
Min
200
DD
–2 V) +1.3 V
30
30
Figure 22
DD
–2)+1 V
Table
(3)
.
Table 34
8. All I/Os are CMOS and TTL
and
Typ
40
40
5
Figure 23
are derived from tests
0.32*(V
0.28*(V
for standard I/Os, and
V
DD
DD
DD
Max
–2 V)+0.75 V
5.5
5.2
±1
50
50
–2 V)+0.8 V
3
+0.3
Unit
mV
mV
µA
kΩ
kΩ
pF
V