MC9S08LG32CLH Freescale Semiconductor, MC9S08LG32CLH Datasheet - Page 34

• Manufacturer Part Number: MC9S08LG32CLH
• Description: IC MCU 8BIT LG32 FLASH 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08LG32CLH

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LCD, LVD, PWM
• Number Of I /o: 53
• Program Memory Size: 32KB (32K x 8)
• Program Memory Type: FLASH
• Ram Size: 1.9K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: S08LG
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1984 B
• Interface Type: SCI/SPI
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 53
• Number Of Timers: 1
• Operating Supply Voltage: 2.7 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08LG32
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12-ch x 12-bit
• Controller Family/series: HCS08
• No. Of I/o's: 53
• Ram Memory Size: 2KB
• Cpu Speed: 40MHz
• No. Of Timers: 2
• Embedded Interface Type: I2C, SCI, SPI
• Rohs Compliant: Yes
• For Use With: DEMO9S08LG32 - DEMO BOARD FOR LG32 FAMILY MCU
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
2.12
2.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section.
34
1
2
3
4
5
C
D
D
D
D
D
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the 9S12Dx64. For additional information on how
Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25 °C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
The frequency of this clock is controlled by a software setting.
C
D
D
D
D
C
C
C
C
D
D
C
C
VLL3 Supply Voltage
LCD Frame Frequency
LCD Charge Pump Capacitance
LCD Bypass Capacitance
LCD Glass Capacitance
DD
LCD Specifications
Flash Specifications
Supply voltage for program/erase
–40 °C to 85 °C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
= 5.0 V, bus frequency = 4.0 MHz.
T
T = 25 °C
L
to T
H
= –40 °C to + 85 °C
Characteristic
5
Characteristic
2
2
3
3
1
4
Table 17. LCD Electricals, 3 V Glass
MC9S08LG32 Series Data Sheet, Rev. 7
2
Table 18. Flash Characteristics
2
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
Symbol
C
f
C
VLL3
C
Frame
BYLCD
glass
LCD
DD
10,000
. These values are measured at room temperatures
Min
150
2.7
2.7
—
—
15
5
Min
2.7
28
—
—
—
100,000
Typical
20,000
4000
100
—
9
4
4
6
2000
Typ
100
100
30
—
DD
supply. For more detailed
Freescale Semiconductor
Max
6.67
200
5.5
5.5
—
—
—
—
—
8000
Max
100
100
5.5
64
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
Units
Hz
pF
V