M30853FJGP#U3 Renesas Electronics America, M30853FJGP#U3 Datasheet - Page 61
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M30853FJGP#U3
Manufacturer Part Number
M30853FJGP#U3
Description
IC M32C MCU FLASH 100LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M32C/80r
Datasheets
1.M3087BFLGPU3.pdf
(364 pages)
2.M30853FHFPD5.pdf
(94 pages)
3.M30853FHFPU3.pdf
(544 pages)
Specifications of M30853FJGP#U3
Core Processor
M32C/80
Core Size
16/32-Bit
Speed
32MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
512KB (512K x 8)
Program Memory Type
FLASH
Ram Size
24K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
For Use With
R0K330879S001BE - KIT DEV RSK M32C/87R0K330879S000BE - KIT DEV RSK M32C/87
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M30853FJGP#U3M30853FJGP#D5
Manufacturer:
Renesas Electronics America
Quantity:
10 000
R
M
e
3
. v
Figure 5.3 V
2
1
C
2 .
8 /
1
5
Memory Expansion Mode and Microprocessor Mode
(when accessing an external memory space)
CSi
ADi
BHE
CSi
WR,WRL,
WRH
DBi
J
BCLK
RD
DB
NOTES:
BCLK
ADi
BHE
G
[ Read Timing ]
[ Write timing ]
u
. l
o r
NOTES:
0
u
A maximum of 35ns is guaranteed for t
1. Values guaranteed only when the microcomputer is used independently.
2. Varies with operation frequency:
, 1
p
3. Varies with operation frequency:
CC1
2
(
t
(if external bus cycle is a +b , m=b)
t
t
t
t
(if external bus cycle is a +b , n=(bx2)-1)
M
d(DB-WR)
h(WR-DB)
h(WR-AD)
h(WR-CS)
w(WR)
0
t
t
ac1(RD-DB)
ac1(AD-DB)
0
3
t
d(BCLK-AD)
=V
5
2
=(tcyc/2 x n-15)ns.min
C
CC2
Page 59
8 /
=(tcyc x m-20)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
=(tcyc/2-10)ns.min
t
t
18ns.max
t
18ns.max
18ns.max
18ns.max
18ns.max
d(BCLK-CS)
t
d(BCLK-AD)
d(BCLK-CS)
d(BCLK-RD)
, 5
=(tcyc x n-35)ns.max (if external bus cycle is a + b , n=a+b)
=(tcyc/2 x m-35)ns.max (if external bus cycle is a + b , m=(b x 2)+1)
=5V Timing Diagram (1)
tcyc
M
(1 +1 Bus Cycle)
tcyc
(1 +1 Bus Cycle)
3
2
(1)
(1)
C
f o
8 /
t
8
t
d(BCLK-WR)
18ns.max
5
ac1(AD-DB)
7
) T
Hi-Z
t
d(DB-WR)
d(BCLK-AD)
(2)
t
ac1(RD-DB)
(3)
t
w(WR)
t
su(DB-BCLK)
26ns.min
+t
(3)
su(DB-BCLK)
(2)
Measurement Conditions:
(1)
tcyc=
t
t
h(WR-DB)
h(BCLK-WR)
t
• V
• Input high and low voltage: V
• Output high and low voltage: V
h(WR-CS)
t
-5ns.min
h(WR-AD)
CC1
f
(BCLK)
.
10
=V
9
(3)
CC2
(3)
(3)
t
h(BCLK-AD)
=4.2 to 5.5V
t
t
h(BCLK-CS)
t
-3ns.min
t
h(BCLK-AD)
-3ns.min
h(BCLK-CS)
-3ns.min
h(BCLK-RD)
-3ns.min
-5ns.min
0ns.min
t
t
t
h(RD-DB)
0ns.min
h(RD-AD)
h(RD-CS)
0ns.min
5. Electrical Characteristics (M32C/85)
IH
=2.5V, V
OH
=2.0V, V
Vcc
IL
1
=0.8V
=Vcc
OL
=0.8V
2
=5V