PIC18LF2431-I/SP Microchip Technology, PIC18LF2431-I/SP Datasheet - Page 12

IC MCU FLASH 8KX16 28-DIP

PIC18LF2431-I/SP

Manufacturer Part Number
PIC18LF2431-I/SP
Description
IC MCU FLASH 8KX16 28-DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr

Specifications of PIC18LF2431-I/SP

Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, Power Control PWM, QEI, POR, PWM, WDT
Number Of I /o
24
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
2 V ~ 5.5 V
Data Converters
A/D 5x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
28-DIP (0.300", 7.62mm)
Controller Family/series
PIC18
No. Of I/o's
24
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Processor Series
PIC18LF
Core
PIC
Data Bus Width
8 bit
Data Ram Size
768 B
Interface Type
EUSART, I2C, SPI, SSP
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
24
Number Of Timers
1 x 8
Operating Supply Voltage
2 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
52715-96, 52716-328, 52717-734, 52712-325, EWPIC18
Development Tools By Supplier
PG164130, DV164035, DV244005, DV164005, PG164120, ICE2000, ICE4000, DM183021, DV164136
Minimum Operating Temperature
- 40 C
On-chip Adc
5 bit
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Contains lead / RoHS non-compliant
PIC18F2331/2431/4331/4431
3.2
Programming code memory is accomplished by first
loading data into the appropriate write buffers and then
initiating a programming sequence. Each panel in the
code memory space (see Figure 2-4) has an 8-byte
deep write buffer that must be loaded prior to initiating
a write sequence. The actual memory write sequence
takes the contents of these buffers and programs the
associated EEPROM code memory.
Typically, all of the program buffers are written in paral-
lel (Multi-Panel Write mode). In other words, in the case
of a 16-Kbyte device (2 panels with an 8-byte buffer per
panel), 16 bytes will be simultaneously programmed
during each programming sequence. In this case, the
offset of the write within each panel is the same (see
Figure 3-4). Multi-Panel Write mode is enabled by
appropriately configuring the Programming Control
register located at 3C0006h.
FIGURE 3-4:
DS30500B-page 12
Note: TBLPTR = TBLPTRU:TBLPTRH:TBLPTRL.
Panel 2
TBLPTR<21:13> = 1
Panel 1
TBLPTR<21:13> = 0
Code Memory Programming
TBLPTR<2:0> = 7
TBLPTR<2:0> = 6
TBLPTR<2:0> = 5
TBLPTR<2:0> = 4
TBLPTR<2:0> = 3
TBLPTR<2:0> = 2
TBLPTR<2:0> = 1
TBLPTR<2:0> = 0
TBLPTR<2:0> = 7
TBLPTR<2:0> = 6
TBLPTR<2:0> = 5
TBLPTR<2:0> = 4
TBLPTR<2:0> = 3
TBLPTR<2:0> = 2
TBLPTR<2:0> = 1
TBLPTR<2:0> = 0
ERASE AND WRITE BOUNDARIES
Offset = TBLPTR<12:3>
Offset = TBLPTR<12:3>
The programming duration is externally timed and is
controlled by SCLK. After a “Start Programming” com-
mand is issued (4-bit command, ‘1111’), a NOP is
issued, where the 4th SCLK is held high for the
duration of the programming time, P9.
After SCLK is brought low, the programming sequence
is terminated. SCLK must be held low for the time spec-
ified by parameter P10 to allow high voltage discharge
of the memory array.
The code sequence to program a PIC18FXX31 device
is shown in Table 3-4. The flowchart shown in
Figure 3-5 depicts the logic necessary to completely
write a PIC18FXX31 device. The timing diagram that
details the “Start Programming” command, and
parameters P9 and P10, is shown in Figure 3-6.
Note:
The TBLPTR register must contain the
same offset value when initiating the pro-
gramming sequence as it did when the
write buffers were loaded.
 2010 Microchip Technology Inc.
Erase Region
Erase Region
Offset = TBLPTR<12:6>
Offset = TBLPTR<12:6>
(64 bytes)
(64 bytes)

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