M306N4FGGP#U3 Renesas Electronics America, M306N4FGGP#U3 Datasheet - Page 81

IC M16C/6N4 MCU FLASH 100-LQFP

M306N4FGGP#U3

Manufacturer Part Number
M306N4FGGP#U3
Description
IC M16C/6N4 MCU FLASH 100-LQFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/6Nr
Datasheets

Specifications of M306N4FGGP#U3

Core Processor
M16C/60
Core Size
16-Bit
Speed
24MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
3 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-LQFP
Package
100LQFP
Family Name
M16C
Maximum Speed
24 MHz
Operating Supply Voltage
3.3|5 V
Data Bus Width
16|32 Bit
Number Of Programmable I/os
87
Interface Type
I2C/UART
On-chip Adc
26-chx10-bit
On-chip Dac
2-chx8-bit
Number Of Timers
11
For Use With
R0K3306NKS001BE - KIT DEV RSK RSK-M16C/6NKR0K3306NKS000BE - KIT DEV RSK RSK-M16C/6NK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-

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M16C/6N Group (M16C/6N4)
Rev.2.40
REJ03B0003-0240
Under development
This document is under development and its contents are subject to change.
Switching Characteristics
(Referenced to VCC = 3.3 V, VSS = 0 V, at Topr = –40 to 85 °C unless otherwise specified)
Table 5.68 Memory Expansion Mode and Microprocessor Mode
NOTES:
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
d(BCLK-AD)
h(BCLK-AD)
h(RD-AD)
h(WR-AD)
d(BCLK-CS)
h(BCLK-CS)
h(RD-CS)
h(WR-CS)
d(BCLK-RD)
h(BCLK-RD)
d(BCLK-WR)
h(BCLK-WR)
d(BCLK-DB)
h(BCLK-DB)
d(DB-WR)
h(WR-DB)
d(BCLK-HLDA)
d(BCLK-ALE)
h(BCLK-ALE)
d(AD-ALE)
h(ALE-AD)
d(AD-RD)
d(AD-WR)
dZ(RD-AD)
Symbol
1. Calculated according to the BCLK frequency as follows:
2. Calculated according to the BCLK frequency as follows:
3. Calculated according to the BCLK frequency as follows:
4. Calculated according to the BCLK frequency as follows:
Aug 25, 2006
0.5 ✕ 10
f(BCLK)
(n –0.5) ✕ 10
0.5 ✕ 10
f(BCLK)
0.5 ✕ 10
f(BCLK)
f(BCLK)
Address output delay time
Address output hold time (in relation to BCLK)
Address output hold time (in relation to RD)
Address output hold time (in relation to WR)
Chip select output delay time
Chip select output hold time (in relation to BCLK)
Chip select output hold time (in relation to RD)
Chip select output hold time (in relation to WR)
RD signal output delay time
RD signal output hold time
WR signal output delay time
WR signal output hold time
Data output delay time (in relation to BCLK)
Data output hold time (in relation to BCLK)
Data output delay time (in relation to WR)
Data output hold time (in relation to WR)
__________
HLDA output delay time
ALE signal output delay time (in relation to BCLK)
ALE signal output hold time (in relation to BCLK)
ALE signal output delay time (in relation to Address)
ALE signal output hold time (in relation to Address)
RD signal output delay from the end of Address
WR signal output delay from the end of Address
Address output floating start time
(for 2- to 3-wait setting, external area access and multiplexed bus selection)
9
9
9
– 10 [ns]
– 40 [ns]
– 15 [ns]
page 79 of 88
9
– 50 [ns]
Parameter
n is “2” for 2-wait setting, “3” for 3-wait setting.
Figure 5.21
Measuring
Condition
5. Electric Characteristics (Normal-ver.)
(NOTE 1)
(NOTE 1)
(NOTE 1)
(NOTE 1)
(NOTE 2)
(NOTE 1)
(NOTE 3)
(NOTE 4)
Min.
–4
4
4
0
0
4
0
0
Standard
VCC = 3.3 V
Max.
50
50
40
40
50
40
25
8
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns

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