ATTINY48-MUR Atmel, ATTINY48-MUR Datasheet - Page 26

• Manufacturer Part Number: ATTINY48-MUR
• Description: MCU AVR 4KB FLASH 12MHZ 32QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY48-MUR

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 12MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 28
• Program Memory Size: 4KB (2K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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ATtiny48/88
erased before the new value is programmed, or Erase and Write can be split in two different
operations. The programming times for the different modes are shown in
Table 5-4.
When EEPE is set any write to EEPMn will be ignored.
During reset, the EEPMn bits will be reset to 0b00 unless the EEPROM is busy programming.
• Bit 3 – EERIE: EEPROM Ready Interrupt Enable
Writing this bit to one enables the EEPROM Ready Interrupt. Provided the I-bit in SREG is set,
the EEPROM Ready Interrupt is triggered when non-volatile memory is ready for programming.
Writing this bit to zero disables the EEPROM Ready Interrupt.
• Bit 2 – EEMPE: EEPROM Master Write Enable
The EEMPE bit determines whether writing EEPE to one will have effect or not.
When EEMPE is set and EEPE written within four clock cycles the EEPROM at the selected
address will be programmed. Hardware clears the EEMPE bit to zero after four clock cycles.
If EEMPE is zero the EEPE bit will have no effect.
• Bit 1 – EEPE: EEPROM Write Enable
The EEPROM Write Enable Signal EEPE is the write strobe to the EEPROM. When address
and data are correctly set up, the EEPE bit must be written to one to write the value into the
EEPROM. The EEMPE bit must be written to one before a logical one is written to EEPE, other-
wise no EEPROM write takes place. The following procedure should be followed when writing
the EEPROM (the order of steps 3 and 4 is not essential):
The EEPROM can not be programmed during a CPU write to the Flash memory. The software
must check that the Flash programming is completed before initiating a new EEPROM write. If
the Flash is never being updated by the CPU, step 2 can be omitted.
Caution: An interrupt between step 5 and step 6 will make the write cycle fail, since the
EEPROM Master Write Enable will time-out. If an interrupt routine accessing the EEPROM is
interrupting another EEPROM access, the EEAR or EEDR Register will be modified, causing the
1. Wait until EEPE becomes zero.
2. Wait until SELFPRGEN in SPMCSR becomes zero.
3. Write new EEPROM address to EEAR (optional).
4. Write new EEPROM data to EEDR (optional).
5. Write a logical one to the EEMPE bit while writing a zero to EEPE in EECR.
6. Within four clock cycles after setting EEMPE, write a logical one to EEPE.
EEPM1
0
0
1
1
EEPM0
EEPROM Programming Mode Bits and Programming Times
0
1
0
1
Programming Time
3.4 ms
1.8 ms
1.8 ms
–
Operation
Atomic (erase and write in one operation)
Erase, only
Write, only
Reserved
Table
5-4.
8008G–AVR–04/11