ATTINY261A-MN Atmel, ATTINY261A-MN Datasheet - Page 173

• Manufacturer Part Number: ATTINY261A-MN
• Description: IC MCU AVR 2K FLASH 32QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY261A-MN

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: USI
• Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
• Number Of I /o: 16
• Program Memory Size: 2KB (1K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 128 x 8
• Ram Size: 128 x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 11x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
• Processor Series: ATtiny
• Core: AVR
• Data Bus Width: 8 bit
• Data Ram Size: 128 B, 256 B, 512 B
• Interface Type: SPI, USI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 16
• Number Of Timers: 2
• Operating Supply Voltage: 3.3 V
• Maximum Operating Temperature: + 105 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 40 C
• Operating Temperature Range: - 40 C to + 105 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 18-11. Serial Programming Instruction Set (Continued)
Notes:
8197B–AVR–01/10
Instruction/Operation
Load Program Memory Page, Low byte
Load EEPROM Memory Page (page access)
Read Instructions
Read Program Memory, High byte
Read Program Memory, Low byte
Read EEPROM Memory
Read Lock bits
Read Signature Byte
Read Fuse bits
Read Fuse High bits
Read Extended Fuse Bits
Read Calibration Byte
Write Instructions
Write Program Memory Page
Write EEPROM Memory
Write EEPROM Memory Page (page access)
Write Lock bits
Write Fuse bits
Write Fuse High bits
Write Extended Fuse Bits
1. Not all instructions are applicable for all parts.
2. a = address
3. Bits are programmed ‘0’, unprogrammed ‘1’.
4. To ensure future compatibility, unused Fuses and Lock bits should be unprogrammed (‘1’) .
5. Refer to the correspondig section for Fuse and Lock bits, Calibration and Signature bytes and Page size.
6. Instructions accessing program memory use a word address. This address may be random within the page range.
7. See http://www.atmel.com/avr for Application Notes regarding programming and programmers.
(6)
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
174.
Byte 1
$C2
$AC
$AC
$AC
$AC
$C1
$A0
$4C
$C0
$40
$28
$20
$58
$30
$50
$58
$50
$38
adr MSB
adr MSB
adr MSB
adr MSB
Byte 2
$E0
$A0
$A8
$A4
$00
$00
$00
$00
$00
$08
$08
$00
$00
$00
Instruction Format
0000 000aa
0000 000aa
00aa aaaa
00aa aa00
00aa aaaa
adr LSB
adr LSB
adr LSB
adr LSB
Byte 3
$00
$00
$00
$00
$00
$00
$00
$00
$00
Figure 18-2 on page
high data byte out
low data byte out
low data byte in
data byte out
data byte out
data byte out
data byte out
data byte out
data byte out
data byte out
data byte in
data byte in
data byte in
data byte in
data byte in
data byte in
Byte4
$00
$00
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