PIC12CE518-04/P Microchip Technology, PIC12CE518-04/P Datasheet - Page 65

• Manufacturer Part Number: PIC12CE518-04/P
• Description: IC MCU OTP 512X12 W/EE 8DIP
• Manufacturer: Microchip Technology
• Series: PIC® 12Cr

Specifications of PIC12CE518-04/P

• Core Size: 8-Bit
• Program Memory Size: 768B (512 x 12)
• Core Processor: PIC
• Speed: 4MHz
• Peripherals: POR, WDT
• Number Of I /o: 5
• Program Memory Type: OTP
• Eeprom Size: 16 x 8
• Ram Size: 25 x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 8-DIP (0.300", 7.62mm)
• Controller Family/series: PIC12
• No. Of I/o's: 6
• Eeprom Memory Size: 16Byte
• Ram Memory Size: 25Byte
• Cpu Speed: 4MHz
• No. Of Timers: 1
• Processor Series: PIC12C
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 25 B
• Maximum Clock Frequency: 4 MHz
• Number Of Programmable I/os: 5
• Number Of Timers: 1
• Operating Supply Voltage: 3 V to 5.5 V
• Maximum Operating Temperature: + 70 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: 52715-96, 52716-328, 52717-734
• Development Tools By Supplier: ICE2000
• Minimum Operating Temperature: 0 C
• On-chip Adc: 8 bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• For Use With: ISPICR1 - ADAPTER IN-CIRCUIT PROGRAMMINGDVA12XP080 - ADAPTER DEVICE FOR MPLAB-ICEAC124001 - MODULE SKT PROMATEII 8DIP/SOIC
• Data Converters: -
• Connectivity: -
• Lead Free Status / Rohs Status: Details

11.0
Absolute Maximum Ratings†
Ambient Temperature under bias ........................................................................................................... –40°C to +125°C
Storage Temperature ............................................................................................................................. –65°C to +150°C
Voltage on V
Voltage on MCLR with respect to V
Voltage on all other pins with respect to V
Total Power Dissipation
Max. Current out of V
Max. Current into V
Input Clamp Current, I
Output Clamp Current, I
Max. Output Current sunk by any I/O pin................................................................................................................25 mA
Max. Output Current sourced by any I/O pin...........................................................................................................25 mA
Max. Output Current sourced by I/O port (GPIO) .................................................................................................100 mA
Max. Output Current sunk by I/O port (GPIO )......................................................................................................100 mA
Note 1: Power Dissipation is calculated as follows: P
1999 Microchip Technology Inc.
†
This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operation listings of this specification is not implied. Exposure to maximum rating conditions for
extended periods may affect device reliability.
NOTICE: Stresses above those listed under "Maximum Ratings" may cause permanent damage to the device.
ELECTRICAL CHARACTERISTICS - PIC12C508/PIC12C509
DD
with respect to V
DD
SS
IK
pin .....................................................................................................................................150 mA
(1)
OK
pin ..................................................................................................................................200 mA
(V
....................................................................................................................................700 mW
I
(V
< 0 or V
O
< 0 or V
SS
SS
.................................................................................................................0 to +7.5 V
I
> V
...............................................................................................................0 to +14 V
O
DD
> V
SS
)
............................................................................... –0.6 V to (V
DD
)
DIS
= V
DD
x {I
DD
-
I
OH
} +
{(V
DD
PIC12C5XX
-V
OH
) x I
OH
DS40139E-page 65
} + (V
DD
OL
+ 0.6 V)
20 mA
20 mA
x I
OL
)