ATTINY461A-SU Atmel, ATTINY461A-SU Datasheet - Page 172
ATTINY461A-SU
Manufacturer Part Number
ATTINY461A-SU
Description
IC MCU AVR 4K FLASH 20MHZ 20SOIC
Manufacturer
Atmel
Series
AVR® ATtinyr
Specifications of ATTINY461A-SU
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
USI
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
16
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 11x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Controller Family/series
ATtiny
No. Of I/o's
16
Eeprom Memory Size
256Byte
Ram Memory Size
256Byte
Cpu Speed
20MHz
Rohs Compliant
Yes
Processor Series
ATTINY4x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI
Maximum Clock Frequency
20 MHz
Number Of Programmable I/os
16
Operating Supply Voltage
1.8 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWAVR, EWAVR-BL
Development Tools By Supplier
ATAVRDRAGON, ATSTK500, ATSTK600, ATAVRISP2, ATAVRONEKIT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATTINY461A-SU
Manufacturer:
FSC
Quantity:
30 000
Part Number:
ATTINY461A-SU
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Company:
Part Number:
ATTINY461A-SUR
Manufacturer:
HITTIE
Quantity:
2 140
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18.6.2
Table 18-11. Serial Programming Instruction Set
172
Instruction/Operation
Programming Enable
Chip Erase (Program Memory/EEPROM)
Poll RDY/BSY
Load Instructions
Load Extended Address byte
Load Program Memory Page, High byte
ATtiny261A/461A/861A
Serial Programming Instruction set
Table 18-10. Minimum Wait Delay Before Writing the Next Flash or EEPROM Location
The instruction set is described in
(1)
Symbol
t
t
t
t
5. A: The EEPROM array is programmed one byte at a time by supplying the address and
6. Any memory location can be verified by using the Read instruction which returns the
7. At the end of the programming session, RESET can be set high to commence normal
8. Power-off sequence (if needed):
WD_FLASH
WD_EEPROM
WD_ERASE
WD_FUSE
interface before the Flash write operation completes can result in incorrect
programming.
data together with the appropriate Write instruction. An EEPROM memory location is
first automatically erased before new data is written. If polling (RDY/BSY) is not used,
the user must wait at least t
In a chip erased device, no 0xFFs in the data file(s) need to be programmed.
B: The EEPROM array is programmed one page at a time. The Memory page is loaded
one byte at a time by supplying the 2 LSB of the address and data together with the
Load EEPROM Memory Page instruction. The EEPROM Memory Page is stored by
loading the Write EEPROM Memory Page Instruction with the 6 MSB of the address.
When using EEPROM page access only byte locations loaded with the Load EEPROM
Memory Page instruction is altered. The remaining locations remain unchanged. If poll-
ing (RDY/BSY) is not used, the used must wait at least t
next page (See
be programmed.
content at the selected address at serial output MISO.
operation.
Set RESET to “1”.
Turn V
CC
power off.
Table
Byte 1
$AC
$AC
$4D
$F0
$48
18-8). In a chip erased device, no 0xFF in the data file(s) need to
WD_EEPROM
Table 18-11
adr MSB
Byte 2
before issuing the next byte. (See
$53
$80
$00
$00
and
Instruction Format
Figure 18-2 on page
Minimum Wait Delay
Extended adr
WD_EEPROM
4.5 ms
4.0 ms
9.0 ms
4.5 ms
adr LSB
Byte 3
$00
$00
$00
174.
before issuing the
Table
high data byte in
data byte out
8197B–AVR–01/10
Byte4
$00
$00
$00
18-10.)
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