ATMEGA8535L-8PU Atmel, ATMEGA8535L-8PU Datasheet - Page 18
![IC AVR MCU 8K 8MHZ 3V 40DIP](/photos/6/70/67049/453-40-dip_sml.jpg)
ATMEGA8535L-8PU
Manufacturer Part Number
ATMEGA8535L-8PU
Description
IC AVR MCU 8K 8MHZ 3V 40DIP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA8535L-8PU
Core Processor
AVR
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
32
Program Memory Size
8KB (4K x 16)
Program Memory Type
FLASH
Eeprom Size
512 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
40-DIP (0.600", 15.24mm)
Processor Series
ATMEGA8x
Core
AVR8
Data Bus Width
8 bit
Data Ram Size
512 B
Interface Type
2-Wire, SPI, USART
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
3
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
Through Hole
3rd Party Development Tools
EWAVR, EWAVR-BL
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
For Use With
ATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEMATSTK500 - PROGRAMMER AVR STARTER KIT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
ATMEGA8535L-8PU
Manufacturer:
TI
Quantity:
12 000
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Data Memory Access Times
EEPROM Data Memory
EEPROM Read/Write Access
18
ATmega8535(L)
This section describes the general access timing concepts for internal memory access.
The internal data SRAM access is performed in two clk
10.
Figure 10. On-chip Data SRAM Access Cycles
The ATmega8535 contains 512 bytes of data EEPROM memory. It is organized as a
separate data space, in which single bytes can be read and written. The EEPROM has
an endurance of at least 100,000 write/erase cycles. The access between the EEPROM
and the CPU is described in the following, specifying the EEPROM Address Registers,
the EEPROM Data Register, and the EEPROM Control Register.
“Memory Programming” on page 237 contains a detailed description on EEPROM Pro-
gramming in SPI or Parallel Programming mode.
The EEPROM Access Registers are accessible in the I/O space.
The write access time for the EEPROM is given in Table 1. A self-timing function, how-
ever, lets the user software detect when the next byte can be written. If the user code
contains instructions that write the EEPROM, some precautions must be taken. In
heavily filtered power supplies, V
causes the device, for some period of time, to run at a voltage lower than specified as
minimum for the clock frequency used, see “Preventing EEPROM Corruption” on page
22 for details on how to avoid problems in these situations.
In order to prevent unintentional EEPROM writes, a specific write procedure must be fol-
lowed. Refer to the description of the EEPROM Control Register for details on this.
When the EEPROM is read, the CPU is halted for four clock cycles before the next
instruction is executed. When the EEPROM is written, the CPU is halted for two clock
cycles before the next instruction is executed.
Address
clk
Data
Data
WR
CPU
RD
Compute Address
T1
Memory Access Instruction
CC
is likely to rise or fall slowly on Power-up/down. This
Address valid
T2
CPU
cycles as described in Figure
Next Instruction
T3
2502K–AVR–10/06
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