ATMEGA3290P-20AUR Atmel, ATMEGA3290P-20AUR Datasheet - Page 302
![MCU AVR 32K FLASH 20MHZ 64TQFP](/photos/6/70/67048/313-100-tqfp_sml.jpg)
ATMEGA3290P-20AUR
Manufacturer Part Number
ATMEGA3290P-20AUR
Description
MCU AVR 32K FLASH 20MHZ 64TQFP
Manufacturer
Atmel
Series
AVR® ATmegar
Specifications of ATMEGA3290P-20AUR
Core Processor
AVR
Core Size
8-Bit
Speed
20MHz
Connectivity
SPI, UART/USART, USI
Peripherals
Brown-out Detect/Reset, LCD, POR, PWM, WDT
Number Of I /o
69
Program Memory Size
32KB (16K x 16)
Program Memory Type
FLASH
Eeprom Size
1K x 8
Ram Size
2K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
*
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
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Manufacturer
Quantity
Price
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27.7
27.7.1
27.7.2
27.7.3
8021G–AVR–03/11
Parallel Programming
Enter Programming Mode
Considerations for Efficient Programming
Chip Erase
The following algorithm puts the device in Parallel (High-voltage) Programming mode:
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Ensure that V
4. Wait 20 - 60 µs, and apply 11.5 - 12.5V to RESET.
5. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
6. Wait at least 300 µs before giving any parallel programming commands.
7. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
If the rise time of the V
tive algorithm can be used.
1. Set Prog_enable pins listed in
2. Apply 4.5 - 5.5V between V
3. Monitor V
4. Keep the Prog_enable pins unchanged for at least 10µs after the High-voltage has been
5. Wait until V
6. Exit Programming mode by power the device down or by bringing RESET pin to 0V.
The loaded command and address are retained in the device during programming. For efficient
programming, the following should be considered.
• The command needs only be loaded once when writing or reading multiple memory locations.
• Skip writing the data value 0xFF, that is the contents of the entire EEPROM (unless the
• Address high byte needs only be loaded before programming or reading a new 256 word
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash and/or EEPROM are
reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
EESAVE Fuse is programmed) and Flash after a Chip Erase.
window in Flash or 256 byte EEPROM. This consideration also applies to Signature bytes
reading.
0V.
applied to ensure the Prog_enable Signature has been latched.
V
applied to ensure the Prog_enable Signature has been latched.
commands.
CC
1. The EEPRPOM memory is preserved during Chip Erase if the EESAVE Fuse is programmed.
to 0V.
CC
CC
, and as soon as V
CC
actually reaches 4.5 -5.5V before giving any parallel programming
reaches at least 1.8V within the next 20 µs.
CC
is unable to fulfill the requirements listed above, the following alterna-
CC
CC
Table 27-10 on page 301
and GND.
Table 27-10 on page 301
and GND.
CC
reaches 0.9 - 1.1V, apply 11.5 - 12.5V to RESET.
(1)
memories plus Lock bits. The Lock bits are
ATmega329P/3290P
to “0000”, RESET pin and V
to “0000”, RESET pin to 0V and
CC
to
302
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