PIC18F442-E/P Microchip Technology, PIC18F442-E/P Datasheet - Page 270
![IC MCU CMOS 40MHZ 8K FLASH 40DIP](/photos/6/61/66192/150-40-dip_sml.jpg)
PIC18F442-E/P
Manufacturer Part Number
PIC18F442-E/P
Description
IC MCU CMOS 40MHZ 8K FLASH 40DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC16F616T-ISL.pdf
(8 pages)
2.PIC18F242-ISO.pdf
(332 pages)
3.PIC18F242-ISO.pdf
(14 pages)
4.PIC18F242-ISO.pdf
(16 pages)
5.PIC18F242-ISO.pdf
(16 pages)
6.PIC18F242-ISO.pdf
(14 pages)
7.PIC18LF242-ISO.pdf
(36 pages)
Specifications of PIC18F442-E/P
Core Size
8-Bit
Program Memory Size
16KB (8K x 16)
Core Processor
PIC
Speed
40MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
34
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
40-DIP (0.600", 15.24mm)
Controller Family/series
PIC18
No. Of I/o's
34
Eeprom Memory Size
256Byte
Ram Memory Size
768Byte
Cpu Speed
40MHz
No. Of Timers
4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
DVA18XP400 - DEVICE ADAPTER 18F4220 PDIP 40LDACICE0206 - ADAPTER MPLABICE 40P 600 MIL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F442-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
- PIC16F616T-ISL PDF datasheet
- PIC18F242-ISO PDF datasheet #2
- PIC18F242-ISO PDF datasheet #3
- PIC18F242-ISO PDF datasheet #4
- PIC18F242-ISO PDF datasheet #5
- PIC18F242-ISO PDF datasheet #6
- PIC18LF242-ISO PDF datasheet #7
- Current page: 270 of 332
- Download datasheet (6Mb)
PIC18FXX2
TABLE 22-2:
DS39564C-page 268
DC Characteristics
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132
D132A V
D132B V
D133
D133A T
D133A T
D134
Param
No.
Note 1: Refer to Section 6.8 for a more detailed discussion on data EEPROM endurance.
† Data in “Typ” column is at 5.0V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
V
T
T
only and are not tested.
DDP
Sym
DEW
RETD
REF
IE
IW
IW
RETD
PP
D
DRW
P
PR
IE
IW
PEW
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Cell Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program FLASH Memory
Cell Endurance
V
V
V
or Write
V
ICSP Block Erase Cycle Time
ICSP Erase or Write Cycle Time
(externally timed)
Self-timed Write Cycle Time
Characteristic Retention
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
DD
DD
for Read/Write
for Read
for Block Erase
for Externally Timed Erase
for Self-timed Write
Characteristic
PP
(1)
pin
Standard Operating Conditions (unless otherwise stated)
Operating temperature -40°C
100K
V
V
V
9.00
10K
Min
1M
4.5
4.5
40
40
—
—
—
—
MIN
MIN
MIN
1
100K
Typ†
10M
1M
—
—
—
—
—
—
—
—
—
—
4
4
2
13.25
Max
5.5
5.5
5.5
5.5
5.5
10
—
—
—
—
—
—
—
—
—
-40°C
Units
Year Provided no other
Year Provided no other
E/W -40 C to +85 C
E/W -40°C to +85°C
E/W -40 C to +85 C
mA
ms
ms
ms
ms
V
V
V
V
V
V
T
T
A
A
Using EECON to read/write
V
voltage
specifications are violated
V
voltage
Using ICSP port
Using ICSP port
V
voltage
V
V
specifications are violated
© 2006 Microchip Technology Inc.
+85°C for industrial
MIN
MIN
MIN
DD
DD
+125°C for extended
= Minimum operating
= Minimum operating
= Minimum operating
4.5V
4.5V
Conditions
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