ATMEGA162V-8PU Atmel, ATMEGA162V-8PU Datasheet - Page 237

• Manufacturer Part Number: ATMEGA162V-8PU
• Description: IC AVR MCU 16K 8MHZ 1.8V 40DIP
• Manufacturer: Atmel
• Series: AVR® ATmegar

Specifications of ATMEGA162V-8PU

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 8MHz
• Connectivity: EBI/EMI, SPI, UART/USART
• Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
• Number Of I /o: 35
• Program Memory Size: 16KB (8K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 512 x 8
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 40-DIP (0.600", 15.24mm)
• Processor Series: ATMEGA16x
• Core: AVR8
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: JTAG/SPI/USART
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 35
• Number Of Timers: 4
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• 3rd Party Development Tools: EWAVR, EWAVR-BL
• Minimum Operating Temperature: - 40 C
• Package: 40PDIP
• Device Core: AVR
• Family Name: ATmega
• Maximum Speed: 8 MHz
• For Use With: ATSTK600-TQFP44 - STK600 SOCKET/ADAPTER 44-TQFPATSTK600 - DEV KIT FOR AVR/AVR32770-1007 - ISP 4PORT ATMEL AVR MCU SPI/JTAGATAVRISP2 - PROGRAMMER AVR IN SYSTEMATJTAGICE2 - AVR ON-CHIP D-BUG SYSTEMATSTK500 - PROGRAMMER AVR STARTER KIT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Data Converters: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Chip Erase
Programming the
Flash
2513K–AVR–07/09
The Chip Erase will erase the Flash and EEPROM
not reset until the program memory has been completely erased. The Fuse bits are not
changed. A Chip Erase must be performed before the Flash or EEPROM are reprogrammed.
Note:
Load Command “Chip Erase”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “1000 0000”. This is the command for Chip Erase.
4. Give XTAL1 a positive pulse. This loads the command.
5. Give WR a negative pulse. This starts the Chip Erase. RDY/BSY goes low.
6. Wait until RDY/BSY goes high before loading a new command.
The Flash is organized in pages, see
program data is latched into a page buffer. This allows one page of program data to be pro-
grammed simultaneously. The following procedure describes how to program the entire Flash
memory:
A. Load Command “Write Flash”
1. Set XA1, XA0 to “10”. This enables command loading.
2. Set BS1 to “0”.
3. Set DATA to “0001 0000”. This is the command for Write Flash.
4. Give XTAL1 a positive pulse. This loads the command.
B. Load Address Low byte
1. Set XA1, XA0 to “00”. This enables address loading.
2. Set BS1 to “0”. This selects low address.
3. Set DATA = Address low byte (0x00 - 0xFF).
4. Give XTAL1 a positive pulse. This loads the address low byte.
C. Load Data Low Byte
1. Set XA1, XA0 to “01”. This enables data loading.
2. Set DATA = Data low byte (0x00 - 0xFF).
3. Give XTAL1 a positive pulse. This loads the data byte.
D. Load Data High Byte
1. Set BS1 to “1”. This selects high data byte.
2. Set XA1, XA0 to “01”. This enables data loading.
3. Set DATA = Data high byte (0x00 - 0xFF).
4. Give XTAL1 a positive pulse. This loads the data byte.
E. Latch Data
1. Set BS1 to “1”. This selects high data byte.
2. Give PAGEL a positive pulse. This latches the data bytes (See
F. Repeat B through E until the entire buffer is filled or until all data within the page is loaded.
waveforms).
1. The EEPRPOM memory is preserved during chip erase if the EESAVE Fuse is programmed.
Table 105 on page
(1)
memories plus Lock bits. The Lock bits are
236. When programming the Flash, the
Figure 98
ATmega162/V
for signal
237