PIC18F448-E/P Microchip Technology, PIC18F448-E/P Datasheet - Page 63
![IC MCU FLASH 8KX16 W/CAN 40-DIP](/photos/6/61/66192/150-40-dip_sml.jpg)
PIC18F448-E/P
Manufacturer Part Number
PIC18F448-E/P
Description
IC MCU FLASH 8KX16 W/CAN 40-DIP
Manufacturer
Microchip Technology
Series
PIC® 18Fr
Datasheets
1.PIC18LF242-ISO.pdf
(36 pages)
2.PIC18F248-ISO.pdf
(402 pages)
3.PIC18F248-ISO.pdf
(8 pages)
Specifications of PIC18F448-E/P
Core Processor
PIC
Core Size
8-Bit
Speed
40MHz
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
33
Program Memory Size
16KB (8K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
768 x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
External
Operating Temperature
-40°C ~ 125°C
Package / Case
40-DIP (0.600", 15.24mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
PIC18F448-E/PT
Manufacturer:
Microchip Technology
Quantity:
10 000
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5.3
To read a data memory location, the user must write the
address to the EEADR register, clear the EEPGD and
CFGS control bits (EECON1<7:6>) and then set
control bit RD (EECON1<0>). The data is available in
the very next instruction cycle of the EEDATA register;
therefore, it can be read by the next instruction.
EEDATA will hold this value until another read
operation or until it is written to by the user (during a
write operation).
EXAMPLE 5-1:
EXAMPLE 5-2:
© 2006 Microchip Technology Inc.
MOVLW
MOVWF
BCF
BCS
BSF
MOVF
Required
Sequence
Reading the Data EEPROM
Memory
DATA_EE_ADDR
EEADR
EECON1, EEPGD
EECON1, CFGS
EECON1, RD
EEDATA, W
MOVLW
MOVWF
MOVLW
MOVWF
BCF
BCF
BSF
BCF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BSF
.
.
.
BCF
DATA EEPROM READ
DATA EEPROM WRITE
DATA_EE_ADDR
EEADR
DATA_EE_DATA
EEDATA
EECON1, EEPGD
EECON1, CFGS
EECON1, WREN
INTCON, GIE
55h
EECON2
0AAh
EECON2
EECON1, WR
INTCON, GIE
EECON1, WREN
;
;Data Memory Address
;to read
;Point to DATA memory
;
;EEPROM Read
;W = EEDATA
;
; Data Memory Address to read
;
; Data Memory Value to write
; Point to DATA memory
; Access program FLASH or Data EEPROM memory
; Enable writes
; Disable interrupts
;
; Write 55h
;
; Write AAh
; Set WR bit to begin write
; Enable interrupts
; user code execution
; Disable writes on write complete (EEIF set)
5.4
To write an EEPROM data location, the address must
first be written to the EEADR register and the data writ-
ten to the EEDATA register. Then, the sequence in
Example 5-2 must be followed to initiate the write cycle.
The write will not initiate if the above sequence is not
exactly followed (write 55h to EECON2, write 0AAh to
EECON2, then set WR bit) for each byte. It is strongly
recommended that interrupts be disabled during this
code segment.
Additionally, the WREN bit in EECON1 must be set to
enable writes. This mechanism prevents accidental
writes to data EEPROM due to unexpected code exe-
cution (i.e., runaway programs). The WREN bit should
be kept clear at all times, except when updating the
EEPROM. The WREN bit is not cleared by hardware.
After a write sequence has been initiated, clearing the
WREN bit will not affect the current write cycle. The WR
bit will be inhibited from being set unless the WREN bit
is set. The WREN bit must be set on a previous instruc-
tion. Both WR and WREN cannot be set with the same
instruction.
At the completion of the write cycle, the WR bit is
cleared in hardware and the EEPROM Write Complete
Interrupt Flag bit (EEIF) is set. The user may either
enable this interrupt or roll this bit. EEIF must be
cleared by software.
Writing to the Data EEPROM
Memory
PIC18FXX8
DS41159E-page 61
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