DSPIC30F6013T-20E/PF Microchip Technology, DSPIC30F6013T-20E/PF Datasheet - Page 55
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DSPIC30F6013T-20E/PF
Manufacturer Part Number
DSPIC30F6013T-20E/PF
Description
IC DSPIC MCU/DSP 132K 80TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F6014-20IPF.pdf
(228 pages)
2.DSPIC30F6014-20IPF.pdf
(22 pages)
3.DSPIC30F6014-20IPF.pdf
(28 pages)
Specifications of DSPIC30F6013T-20E/PF
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
68
Program Memory Size
132KB (44K x 24)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
80-TQFP, 80-VQFP
For Use With
DM300024 - KIT DEMO DSPICDEM 1.1AC164314 - MODULE SKT FOR PM3 80PFAC30F001 - MODULE SOCKET DSPIC30F 80TQFPXLT80PT2 - SOCKET TRANSITION ICE 80TQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSPIC30F6013T20EP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC30F6013T-20E/PF
Manufacturer:
Microchip Technology
Quantity:
10 000
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6.6
A complete programming sequence is necessary for
programming or erasing the internal Flash in RTSP
mode. A programming operation is nominally 2 msec in
duration and the processor stalls (waits) until the oper-
ation is finished. Setting the WR bit (NVMCON<15>)
starts the operation, and the WR bit is automatically
cleared when the operation is finished.
6.6.1
The user can erase and program one row of program
Flash memory at a time. The general process is:
1.
2.
3.
EXAMPLE 6-1:
© 2006 Microchip Technology Inc.
; Setup NVMCON for erase operation, multi word write
; program memory selected, and writes enabled
; Init pointer to row to be ERASED
Read one row of program Flash (32 instruction
words) and store into data RAM as a data
“image”.
Update the data image with the desired new
data.
Erase program Flash row.
a)
b)
c)
d)
e)
f)
g)
Programming Operations
Setup NVMCON register for multi-word,
program Flash, erase, and set WREN bit.
Write address of row to be erased into
NVMADRU/NVMADR.
Write ‘55’ to NVMKEY.
Write ‘AA’ to NVMKEY.
Set the WR bit. This will begin erase cycle.
CPU will stall for the duration of the erase
cycle.
The WR bit is cleared when erase cycle
ends.
MOV
MOV
MOV
MOV
MOV
MOV
DISI
MOV
MOV
MOV
MOV
BSET
NOP
NOP
PROGRAMMING ALGORITHM FOR
PROGRAM FLASH
#0x4041,W0
W0
#tblpage(PROG_ADDR),W0
W0
#tbloffset(PROG_ADDR),W0
W0, NVMADR
#5
#0x55,W0
W0
#0xAA,W1
W1
NVMCON,#WR
,
,
,
,
ERASING A ROW OF PROGRAM MEMORY
NVMCON
NVMADRU
NVMKEY
NVMKEY
dsPIC30F6011/6012/6013/6014
;
; Init NVMCON SFR
;
; Initialize PM Page Boundary SFR
; Intialize in-page EA[15:0] pointer
; Initialize NVMADR SFR
; Block all interrupts with priority <7 for
; next 5 instructions
; Write the 0x55 key
;
; Write the 0xAA key
; Start the erase sequence
; Insert two NOPs after the erase
; command is asserted
4.
5.
6.
6.6.2
Example 6-1 shows a code sequence that can be used
to erase a row (32 instructions) of program memory.
Write 32 instruction words of data from data
RAM “image” into the program Flash write
latches.
Program 32 instruction words into program
Flash.
a)
b)
c)
d)
e)
f)
Repeat steps 1 through 5 as needed to program
desired amount of program Flash memory.
Setup NVMCON register for multi-word,
program Flash, program, and set WREN
bit.
Write ‘55’ to NVMKEY.
Write ‘AA’ to NVMKEY.
Set the WR bit. This will begin program
cycle.
CPU will stall for duration of the program
cycle.
The WR bit is cleared by the hardware
when program cycle ends.
ERASING A ROW OF PROGRAM
MEMORY
DS70117F-page 53
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