ST7FLIT10BF0M6 STMicroelectronics, ST7FLIT10BF0M6 Datasheet - Page 15
ST7FLIT10BF0M6
Manufacturer Part Number
ST7FLIT10BF0M6
Description
IC MCU 8BIT 2K FLASH 20-SOIC
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet
1.ST7FLIT15BY1M6.pdf
(159 pages)
Specifications of ST7FLIT10BF0M6
Core Processor
ST7
Core Size
8-Bit
Speed
8MHz
Connectivity
SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
17
Program Memory Size
2KB (2K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
20-SOIC (7.5mm Width)
Processor Series
ST7FLIT1x
Core
ST7
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
17
Number Of Timers
4
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
ST7FLITE-SK/RAIS, ST7MDT10-DVP3, ST7MDT10-EMU3, STX-RLINK
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 7 Channel
For Use With
497-5049 - KIT STARTER RAISONANCE ST7FLITE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
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5 DATA EEPROM
5.1 INTRODUCTION
The Electrically Erasable Programmable Read
Only Memory can be used as a non volatile back-
up for storing data. Using the EEPROM requires a
basic access protocol described in this chapter.
Figure 7. EEPROM Block Diagram
EECSR
0
ADDRESS BUS
0
DECODER
ADDRESS
0
0
4
0
DECODER
0
4
4
ROW
E2LAT
5.2 MAIN FEATURES
■
■
■
■
■
■
E2PGM
Up to 32 Bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle
duration
WAIT mode management
Readout protection
128
MULTIPLEXER
DATA
(1 ROW = 32 x 8 BITS)
MEMORY MATRIX
HIGH VOLTAGE
DATA BUS
EEPROM
PUMP
DATA LATCHES
128
32 x 8 BITS
ST7LITE1xB
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