ST7FLITE39F2M3TR STMicroelectronics, ST7FLITE39F2M3TR Datasheet - Page 18

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ST7FLITE39F2M3TR

Manufacturer Part Number
ST7FLITE39F2M3TR
Description
IC MCU 8BIT 8K FLASH 20SOIC
Manufacturer
STMicroelectronics
Series
ST7r
Datasheet

Specifications of ST7FLITE39F2M3TR

Core Processor
ST7
Core Size
8-Bit
Speed
16MHz
Connectivity
LINSCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
15
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
384 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 7x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 125°C
Package / Case
20-SOIC (7.5mm Width)
For Use With
497-8406 - BOARD STF20NM50FD/STF7LITE39BF2497-8403 - BOARD DEMO STCC08 AC SW DETECTOR497-5858 - EVAL BOARD PLAYBACK ST7FLITE497-5049 - KIT STARTER RAISONANCE ST7FLITE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ST7FLITE39F2M3TR
Manufacturer:
ST
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Part Number:
ST7FLITE39F2M3TR
Manufacturer:
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Quantity:
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ST7LITE3xF2
DATA EEPROM (Cont’d)
5.4 POWER SAVING MODES
Wait mode
The DATA EEPROM can enter WAIT mode on ex-
ecution of the WFI instruction of the microcontrol-
ler or when the microcontroller enters Active-HALT
mode.The DATA EEPROM will immediately enter
this mode if there is no programming in progress,
otherwise the DATA EEPROM will finish the cycle
and then enter WAIT mode.
Active-Halt mode
Refer to Wait mode.
Halt mode
The DATA EEPROM immediately enters HALT
mode if the microcontroller executes the HALT in-
struction. Therefore the EEPROM will stop the
function in progress, and data may be corrupted.
Figure 9. Data EEPROM Programming Cycle
18/173
1
INTERNAL
PROGRAMMING
VOLTAGE
DATA LATCHES
WRITE OF
ERASE CYCLE
READ OPERATION NOT POSSIBLE
t
PROG
5.5 ACCESS ERROR HANDLING
If a read access occurs while E2LAT=1, then the
data bus will not be driven.
If a write access occurs while E2LAT=0, then the
data on the bus will not be latched.
If a programming cycle is interrupted (by RESET
action), the integrity of the data in memory is not
guaranteed.
5.6 Data EEPROM Read-out Protection
The read-out protection is enabled through an op-
tion bit (see
When this option is selected, the programs and
data stored in the EEPROM memory are protected
against read-out (including a re-write protection).
In Flash devices, when this protection is removed
by reprogramming the Option Byte, the entire Pro-
gram memory and EEPROM is first automatically
erased.
Note: Both Program Memory and data EEPROM
are protected using the same option bit.
WRITE CYCLE
section 15.1 on page
READ OPERATION POSSIBLE
161).
PGM
LAT

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