MC9RS08LE4CWL Freescale Semiconductor, MC9RS08LE4CWL Datasheet - Page 22

• Manufacturer Part Number: MC9RS08LE4CWL
• Description: MCU 8BIT 4K FLASH W/LCD 28-SOIC
• Manufacturer: Freescale Semiconductor
• Series: RS08r

Specifications of MC9RS08LE4CWL

• Core Processor: RS08
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: SCI
• Peripherals: LCD, LVD, POR, PWM, WDT
• Number Of I /o: 26
• Program Memory Size: 4KB (4K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (7.5mm Width)
• Processor Series: RS08LA
• Core: RS08
• Data Bus Width: 8 bit
• Data Ram Size: 256 B
• Interface Type: SCI
• Maximum Clock Frequency: 20 MHz
• Number Of Programmable I/os: 26
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Development Tools By Supplier: DEMO9RS08LA8
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Flash Specifications
22
1
2
3
Num
10
12
13
14
15
16
17
18
11
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
pad and cause permanent damage to the pad. External filtering for the V
V
3
4
5
6
7
8
9
hv
PP
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
filter is shown in
PP
C
C
D
C
C
D
D
D
D
D
D
D
D
D
C
P
P
rise time may potentially trigger the ESD protection structure, which may result in over-current flowing into the
V
Program
Mass erase
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
PP
to T
current
Bus <
to PGM/MASS setup time
rise time
H
= –40°C to 85°C
Figure
me
10 MHz
PP
& t
Characteristic
3
hold time
hv
19.
applied to device)
Table 14. Flash Characteristics (continued)
MC9RS08LE4 MCU Data Sheet, Rev. 3
Figure 19. Example V
2
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
t
D_ret
t
t
t
t
nvh1
t
prog
t
t
t
Read
t
pgs
nvs
nvh
vps
vph
—
me
vrs
rcv
hv
PP
Filtering
PP
1000
Min
500
100
200
100
1.8
20
10
20
20
—
—
—
—
power source is recommended. An example
5
5
1
Typical
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Freescale Semiconductor
Max
200
100
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
cycles
hours
years
Unit
ms
ms
μA
μA
μs
μs
μs
μs
μs
ns
ns
ns
μs
V