S9S08SG4E2VTG Freescale Semiconductor, S9S08SG4E2VTG Datasheet - Page 271
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S9S08SG4E2VTG
Manufacturer Part Number
S9S08SG4E2VTG
Description
MCU 4K FLASH 16-TSSOP
Manufacturer
Freescale Semiconductor
Series
HCS08r
Datasheet
1.S9S08SG4E2CSC.pdf
(316 pages)
Specifications of S9S08SG4E2VTG
Core Processor
HCS08
Core Size
8-Bit
Speed
40MHz
Connectivity
I²C, LIN, SCI, SPI
Peripherals
LVD, POR, PWM, WDT
Number Of I /o
12
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
256 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 105°C
Package / Case
16-TSSOP
Processor Series
S08SG
Core
HCS08
Data Bus Width
8 bit
Data Ram Size
256 B
Interface Type
I2C, SPI, SCI
Maximum Clock Frequency
40 MHz
Number Of Programmable I/os
16
Number Of Timers
2
Operating Supply Voltage
2.7 V to 5.5 V
Maximum Operating Temperature
+ 105 C
Mounting Style
SMD/SMT
3rd Party Development Tools
EWS08
Development Tools By Supplier
DEMO9S08SG32, DEMO9S08SG32AUTO, DEMO9S08SG8, DEMO9S08SG8AUTO
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 12 Channel
On-chip Dac
10 bit, 12 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
S9S08SG4E2VTG
Manufacturer:
Freescale Semiconductor
Quantity:
135
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1
Freescale Semiconductor
SYNC
ACK_ENABLE
ACK_DISABLE
BACKGROUND
READ_STATUS
WRITE_CONTROL
READ_BYTE
READ_BYTE_WS
READ_LAST
WRITE_BYTE
WRITE_BYTE_WS
READ_BKPT
WRITE_BKPT
GO
TRACE1
TAGGO
READ_A
READ_CCR
READ_PC
READ_HX
READ_SP
READ_NEXT
READ_NEXT_WS
WRITE_A
WRITE_CCR
WRITE_PC
WRITE_HX
WRITE_SP
WRITE_NEXT
WRITE_NEXT_WS
The SYNC command is a special operation that does not have a command code.
Mnemonic
Command
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Non-intrusive
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Active BDM
Non-intrusive
Active BDM/
MC9S08SG8 MCU Series Data Sheet, Rev. 6
Table 17-1. BDC Command Summary
n/a
D5/d
D6/d
90/d
E4/SS
C4/CC
E0/AAAA/d/RD
E1/AAAA/d/SS/RD
E8/SS/RD
C0/AAAA/WD/d
C1/AAAA/WD/d/SS
E2/RBKP
C2/WBKP
08/d
10/d
18/d
68/d/RD
69/d/RD
6B/d/RD16
6C/d/RD16
6F/d/RD16
70/d/RD
71/d/SS/RD
48/WD/d
49/WD/d
4B/WD16/d
4C/WD16/d
4F/WD16/d
50/WD/d
51/WD/d/SS
1
Structure
Coding
Request a timed reference pulse to determine
target BDC communication speed
Enable acknowledge protocol. Refer to
Freescale document order no. HCS08RMv1/D.
Disable acknowledge protocol. Refer to
Freescale document order no. HCS08RMv1/D.
Enter active background mode if enabled
(ignore if ENBDM bit equals 0)
Read BDC status from BDCSCR
Write BDC controls in BDCSCR
Read a byte from target memory
Read a byte and report status
Re-read byte from address just read and
report status
Write a byte to target memory
Write a byte and report status
Read BDCBKPT breakpoint register
Write BDCBKPT breakpoint register
Go to execute the user application program
starting at the address currently in the PC
Trace 1 user instruction at the address in the
PC, then return to active background mode
Same as GO but enable external tagging
(HCS08 devices have no external tagging pin)
Read accumulator (A)
Read condition code register (CCR)
Read program counter (PC)
Read H and X register pair (H:X)
Read stack pointer (SP)
Increment H:X by one then read memory byte
located at H:X
Increment H:X by one then read memory byte
located at H:X. Report status and data.
Write accumulator (A)
Write condition code register (CCR)
Write program counter (PC)
Write H and X register pair (H:X)
Write stack pointer (SP)
Increment H:X by one, then write memory byte
located at H:X
Increment H:X by one, then write memory byte
located at H:X. Also report status.
Chapter 17 Development Support
Description
271
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