MC9S08AC16MFGE Freescale Semiconductor, MC9S08AC16MFGE Datasheet - Page 24

• Manufacturer Part Number: MC9S08AC16MFGE
• Description: IC MCU 8BIT 16K FLASH 44-LQFP
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08AC16MFGE

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 40MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, POR, PWM, WDT
• Number Of I /o: 34
• Program Memory Size: 16KB (16K x 8)
• Program Memory Type: FLASH
• Ram Size: 1K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: 44-LQFP
• Processor Series: S08AC
• Core: HCS08
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: RS- 232/SCI/SPI/UART
• Maximum Clock Frequency: 40 MHz
• Number Of Programmable I/os: 34
• Number Of Timers: 8
• Maximum Operating Temperature: + 125 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: EWS08
• Development Tools By Supplier: DEMO9S08AC60E, DEMOACEX, DEMOACKIT, DCF51AC256, DC9S08AC128, DC9S08AC16, DC9S08AC60, DEMO51AC256KIT
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8-ch x 10-bit
• Controller Family/series: HCS08
• No. Of I/o's: 34
• Ram Memory Size: 1KB
• Cpu Speed: 40MHz
• No. Of Timers: 3
• Digital Ic Case Style: LQFP
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Electrical Characteristics
24
1
2
3
Program/Erase voltage
V
Program
Mass erase
Supply voltage for read operation
0 < f
Byte program time
Mass erase time
Cumulative program HV time
Total cumulative HV time
(total of t
HVEN to program setup time
PGM/MASS to HVEN setup time
HVEN hold time for PGM
HVEN hold time for MASS
V
HVEN to V
V
Recovery time
Program/erase endurance
T
Data retention
L
PP
PP
PP
Typicals are measured at 25 °C.
t
programmed more than twice before next erase.
Fast V
and cause permanent damage to the pad. External filtering for the V
filter is shown in
hv
to T
current
Bus
to PGM/MASS setup time
rise time
is the cumulative high voltage programming time to the same row before next erase. Same address can not be
H
< 10 MHz
PP
= –40°C to 85°C
me
PP
rise time may potentially trigger the ESD protection structure, which may result in over current flowing into the pad
& t
3
hold time
hv
applied to device)
Figure
Characteristic
22.
2
Table 16. Flash Characteristics (continued)
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
12 V
Figure 22. Example V
100 Ω
I
I
VPP_erase
Symbol
VPP_prog
t
V
hv_total
t
t
t
V
D_ret
t
t
t
t
nvh1
t
prog
t
t
t
Read
t
pgs
nvh
vph
—
nvs
vps
me
vrs
rcv
hv
PP
PP
PP
Filtering
1 nF
power source is recommended. An example V
1000
11.8
Min
500
100
200
1.8
V
20
10
20
20
15
—
—
—
—
5
5
1
PP
Typical
12
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Freescale Semiconductor
Max
12.2
200
100
5.5
40
—
—
—
—
—
—
—
—
—
—
—
8
2
cycles
hours
years
Unit
ms
ms
μA
μA
μs
μs
μs
μs
μs
ns
ns
ns
μs
V
V
PP