MC9S08QE128CFTR Freescale Semiconductor, MC9S08QE128CFTR Datasheet - Page 33

• Manufacturer Part Number: MC9S08QE128CFTR
• Description: MCU 8BIT 128K FLASH 48-QFN
• Manufacturer: Freescale Semiconductor
• Series: HCS08r

Specifications of MC9S08QE128CFTR

• Core Processor: HCS08
• Core Size: 8-Bit
• Speed: 50MHz
• Connectivity: I²C, LIN, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 38
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 8K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 3.6 V
• Data Converters: A/D 10x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-QFN Exposed Pad
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -

3.13
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V
information about program/erase operations, see the Memory section of the MC9S08QE128 Reference Manual.
Freescale Semiconductor
1
2
3
4
5
The frequency of this clock is controlled by a software setting.
These values are hardware state machine controlled. User code does not need to count cycles. This information supplied
for calculating approximate time to program and erase.
The program and erase currents are additional to the standard run I
with V
Typical endurance for flash was evaluated for this product family on the HC9S12Dx64. For additional information on
how Freescale defines typical endurance, please refer to Engineering Bulletin EB619, Typical Endurance for Nonvolatile
Memory.
Typical data retention values are based on intrinsic capability of the technology measured at high temperature and
de-rated to 25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention,
please refer to Engineering Bulletin EB618, Typical Data Retention for Nonvolatile Memory.
C
D
D
D
D
P
P
P
P
C
C
DD
Supply voltage for program/erase
-40°C to 85°C
Supply voltage for read operation
Internal FCLK frequency
Internal FCLK period (1/FCLK)
Byte program time (random location)
Byte program time (burst mode)
Page erase time
Mass erase time
Byte program current
Page erase current
Program/erase endurance
Data retention
Flash Specifications
T
T = 25°C
= 3.0 V, bus frequency = 4.0 MHz.
L
to T
H
= –40°C to + 85°C
5
Characteristic
2
(2)
3
3
1
4
MC9S08QE128 Series Data Sheet, Rev. 7
(2)
Table 19. Flash Characteristics
(2)
V
Symbol
prog/erase
R
R
V
f
t
t
t
t
t
t
FCLK
IDDBP
IDDPE
D_ret
Burst
Page
Mass
Fcyc
Read
prog
DD
10,000
. These values are measured at room temperatures
Min
150
1.8
1.8
—
—
—
15
5
100,000
Typical
20,000
4000
100
—
9
4
4
6
DD
supply. For more detailed
Electrical Characteristics
Max
6.67
200
3.6
3.6
—
—
—
—
—
cycles
years
t
t
t
t
Unit
kHz
mA
mA
Fcyc
Fcyc
Fcyc
Fcyc
μs
V
V
33