MCF52211CEP66 Freescale Semiconductor, MCF52211CEP66 Datasheet - Page 32

• Manufacturer Part Number: MCF52211CEP66
• Description: IC MCU 128K FLASH 66MHZ 64QFN
• Manufacturer: Freescale Semiconductor
• Series: MCF5221xr

Specifications of MCF52211CEP66

• Core Processor: Coldfire V2
• Core Size: 32-Bit
• Speed: 66MHz
• Connectivity: I²C, SPI, UART/USART, USB OTG
• Peripherals: DMA, LVD, POR, PWM, WDT
• Number Of I /o: 43
• Program Memory Size: 128KB (128K x 8)
• Program Memory Type: FLASH
• Ram Size: 16K x 8
• Voltage - Supply (vcc/vdd): 3 V ~ 3.6 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-QFN
• Processor Series: MCF522x
• Core: ColdFire V2
• Data Bus Width: 32 bit
• Data Ram Size: 16 KB
• Interface Type: QSPI
• Maximum Clock Frequency: 66 MHz
• Number Of Programmable I/os: 55
• Number Of Timers: 18
• Operating Supply Voltage: - 0.3 V to + 4 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Development Tools By Supplier: M52210DEMO, M52211EVB
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 8 Channel
• For Use With: M52210DEMO - BOARD DEV MCF5221X LOW COSTM52211EVB - BOARD EVAL FOR MCF52211
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

2.6
2.7
Freescale Semiconductor
Supply voltage
Standby voltage
Input high voltage
Input low voltage
Input hysteresis
Low-voltage detect trip voltage (V
Low-voltage detect hysteresis (V
Input leakage current
Output high voltage (all input/output and all output pins)
I
Output low voltage (all input/output and all output pins)
I
OH
OL
V
= 2.0mA
= –2.0 mA
in
= V
ESD Protection
DC Electrical Specifications
DD
or V
1
2
Characteristics
ESD target for Human Body Model
ESD target for Machine Model
HBM circuit description
MM circuit description
Number of pulses per pin (HBM)
Number of pulses per pin (MM)
Interval of pulses
2
• Positive pulses
• Negative pulses
• Positive pulses
• Negative pulses
SS
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for
Automotive Grade Integrated Circuits.
A device is defined as a failure if after exposure to ESD pulses the device no longer
meets the device specification requirements. Complete DC parametric and functional
testing is performed per applicable device specification at room temperature followed by
hot temperature, unless specified otherwise in the device specification.
, digital pins
Characteristic
DD
DD
Table 26. ESD Protection Characteristics
rising)
falling)
Table 27. DC Electrical Specifications
MCF52211 ColdFire Microcontroller, Rev. 2
Symbol
R
R
HBM
MM
series
series
—
—
—
—
—
C
C
V
Symbol
V
LVDHYS
V
V
V
V
V
STBY
V
V
HYS
I
LVD
Value
DD
OH
in
OL
2000
1500
IH
IL
200
100
200
0
1
1
3
3
1
1
1, 2
0.06  V
0.7  V
V
V
SS
DD
2.15
–1.0
Min
3.0
1.8
60
—
– 0.3
– 0.5
DD
DD
Units
sec
pF
pF
—
—


V
V
Electrical Characteristics
0.35  V
Max
120
3.6
3.5
4.0
2.3
1.0
0.5
—
—
DD
Unit
mV
mV
A
V
V
V
V
V
V
V
32