MC908AP8CFAE Freescale Semiconductor, MC908AP8CFAE Datasheet - Page 44
![IC MCU 8K FLASH 8MHZ 48-LQFP](/photos/19/7/190723/4134800_sml.jpg)
MC908AP8CFAE
Manufacturer Part Number
MC908AP8CFAE
Description
IC MCU 8K FLASH 8MHZ 48-LQFP
Manufacturer
Freescale Semiconductor
Series
HC08r
Specifications of MC908AP8CFAE
Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Connectivity
I²C, IRSCI, SCI, SPI
Peripherals
LED, LVD, POR, PWM
Number Of I /o
32
Program Memory Size
8KB (8K x 8)
Program Memory Type
FLASH
Ram Size
1K x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
48-LQFP
Controller Family/series
HC08
No. Of I/o's
32
Ram Memory Size
1KB
Cpu Speed
8MHz
No. Of Timers
2
Embedded Interface Type
I2C, SCI, SPI
Rohs Compliant
Yes
Processor Series
HC08AP
Core
HC08
Data Bus Width
8 bit
Data Ram Size
1 KB
Interface Type
SCI, SPI
Maximum Clock Frequency
8 MHz
Number Of Programmable I/os
32
Number Of Timers
4
Maximum Operating Temperature
+ 85 C
Mounting Style
SMD/SMT
Development Tools By Supplier
FSICEBASE, DEMO908AP64E, M68CBL05CE
Minimum Operating Temperature
- 40 C
On-chip Adc
10 bit, 8 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Eeprom Size
-
Lead Free Status / Rohs Status
Details
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MC908AP8CFAE
Manufacturer:
Freescale Semiconductor
Quantity:
10 000
Part Number:
MC908AP8CFAE
Manufacturer:
FREESCALE
Quantity:
20 000
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Memory
2.5.4 FLASH Mass Erase Operation
Use the following procedure to erase the entire FLASH memory:
2.5.5 FLASH Program Operation
Programming of the FLASH memory is done on a row basis. A row consists of 64 consecutive bytes
starting from addresses $XX00, $XX40, $XX80 or $XXC0. Use the following procedure to program a row
of FLASH memory.
44
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set both the ERASE bit and the MASS bit in the FLASH control register.
2. Write any data to any FLASH location within the FLASH memory address range.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time t
6. Clear the ERASE bit.
7. Wait for a time, t
8. Clear the HVEN bit.
9. After time, t
1. Set the PGM bit. This configures the memory for program operation and enables the latching of
2. Write any data to any FLASH location within the address range of the row to be programmed.
3. Wait for a time, t
4. Set the HVEN bit.
5. Wait for a time, t
6. Write data to the FLASH location to be programmed.
7. Wait for time, t
8. Repeat steps 6 and 7 until all bytes within the row are programmed.
9. Clear the PGM bit.
address and data for programming.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
Due to the relatively long mass erase time, user should take care in the
code to prevent a COP reset from happening while the HVEN bit is set.
Programming and erasing of FLASH locations cannot be performed by
code being executed from the FLASH memory. While these operations
must be performed in the order as shown, but other unrelated operations
may occur between the steps.
rcv
rcv
(Figure 2-4
(1 µs), the memory can be accessed in read mode again.
(1 µs), the memory can be accessed in read mode again.
prog
me
nvh
nvs
nvh1
nvs
pgs
(200 ms). (See NOTE below.)
(20 µs to 40 µs).
(5 µs).
(5 µs).
(5 µs).
(10 µs).
(100 µs).
shows a flowchart of the programming algorithm.)
MC68HC908AP Family Data Sheet, Rev. 4
NOTE
NOTE
Freescale Semiconductor
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