MCF51AC256BCPUE Freescale Semiconductor, MCF51AC256BCPUE Datasheet - Page 17

• Manufacturer Part Number: MCF51AC256BCPUE
• Description: MCU 32BIT 256K FLASH 64-LQFP
• Manufacturer: Freescale Semiconductor
• Series: MCF51ACr

Specifications of MCF51AC256BCPUE

• Core Processor: Coldfire V1
• Core Size: 32-Bit
• Speed: 50MHz
• Connectivity: I²C, SCI, SPI
• Peripherals: LVD, PWM, WDT
• Number Of I /o: 54
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• Ram Size: 32K x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 20x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-LQFP
• Processor Series: MCF51AC
• Core: ColdFire V1
• Data Bus Width: 32 bit
• Data Ram Size: 32 KB
• Interface Type: SCI, SPI
• Maximum Clock Frequency: 50.33 MHz
• Number Of Programmable I/os: 54
• Number Of Timers: 8
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• 3rd Party Development Tools: JLINK-CF-BDM26, EWCF
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 12 bit, 20 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Lead Free Status / Rohs Status: Details

The average chip-junction temperature (T
where:
For most applications, P
(if P
Solving
where K is a constant pertaining to the particular part. K can be determined from
P
solving
2.4
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
Freescale Semiconductor
D
(at equilibrium) for a known T
I/O
T

P
P
P
is neglected) is:
Equation 1
Equation 1
A
JA
D
int
I/O
Electrostatic Discharge (ESD) Protection Characteristics
= Ambient temperature, C
= P
= Package thermal resistance, junction-to-ambient, C/W
= I
= Power dissipation on input and output pins — user determined
2
3
4
int
DD
Junction to Ambient Natural Convection
1s — Single layer board, one signal layer
2s2p — Four layer board, 2 signal and 2 power layers
P
 V
and
and
I/O
DD
Equation 2
I/O
Equation 2
, Watts — chip internal power
 P
MCF51AC256 ColdFire Microcontroller Data Sheet, Rev.6
int
K = P
A
and can be neglected. An approximate relationship between P
iteratively for any value of T
. Using this value of K, the values of P
for K gives:
D
P
T
 (T
D
J
J
= K  (T
) in C can be obtained from:
= T
A
+ 273C) + 
A
+ (P
J
+ 273C)
D
 
JA
JA
)
 (P
D
A
)
.
2
D
and T
Equation 3
J
Electrical Characteristics
can be obtained by
by measuring
D
and T
Eqn. 1
Eqn. 2
Eqn. 3
17
J