M306N4FGTFP Renesas Electronics America, M306N4FGTFP Datasheet - Page 326
M306N4FGTFP
Manufacturer Part Number
M306N4FGTFP
Description
IC M16C MCU FLASH 100QFP
Manufacturer
Renesas Electronics America
Series
M16C™ M16C/6Nr
Datasheets
1.M30622SAFPU5.pdf
(308 pages)
2.M306N4FGGPU3.pdf
(94 pages)
3.M306N4FGGPU3.pdf
(414 pages)
Specifications of M306N4FGTFP
Core Processor
M16C/60
Core Size
16-Bit
Speed
20MHz
Connectivity
CAN, I²C, IEBus, SIO, UART/USART
Peripherals
DMA, WDT
Number Of I /o
85
Program Memory Size
256KB (256K x 8)
Program Memory Type
FLASH
Ram Size
10K x 8
Voltage - Supply (vcc/vdd)
4.2 V ~ 5.5 V
Data Converters
A/D 26x10b; D/A 2x8b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
100-QFP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
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M16C/6N Group (M16C/6N4)
Rev.2.40
REJ09B0009-0240
Figure 22.8 Timing Diagram (5)
Memory Expansion Mode and Microprocessor Mode
(For 2-wait setting and external area access)
Measuring conditions :
tcyc =
Read timing
Write timing
Apr 14, 2006
ALE
ALE
BCLK
CSi
BHE
RD
DBi
BCLK
CSi
BHE
WR, WRL
WRH
DBi
ADi
ADi
VCC = 5 V
Input timing voltage : V
Output timing voltage : V
f(BCLK)
1
t
25ns.max
d(BCLK-ALE)
t
25ns.max
d(BCLK-ALE)
Hi-Z
page 302 of 376
t
25ns.max
t
25ns.max
t
25ns.max
t
25ns.max
d(BCLK-CS)
d(BCLK-AD)
d(BCLK-CS)
d(BCLK-AD)
tcyc
tcyc
Hi-Z
t
25ns.max
t
-4ns.min
d(BCLK-RD)
t
-4ns.min
h(BCLK-ALE)
h(BCLK-ALE)
IL
OL
= 0.8 V, V
= 0.4 V, V
t
25ns.max
t
40ns.max
d(BCLK-WR)
d(BCLK-DB)
t
(1.5 ✕ tcyc-40)ns.min
d(DB-WR)
(2.5 ✕ tcyc-45)ns.max
IH
OH
t
ac2(RD-DB)
= 2.0 V
= 2.4 V
t
SU(DB-RD)
40ns.min
(0.5 ✕ tcyc-10)ns.min
t
(0.5 ✕ tcyc-10)ns.min
t
h(WR-DB)
h(WR-AD)
t
0ns.min
h(BCLK-WR)
t
0ns.min
t
0ns.min
t
4ns.min
t
4ns.min
t
4ns.min
h(BCLK-RD)
h(RD-DB)
h(BCLK-DB)
h(BCLK-CS)
h(BCLK-AD)
t
4ns.min
t
0ns.min
t
4ns.min
h(BCLK-CS)
h(RD-AD)
h(BCLK-AD)
22. Electric Characteristics (T/V-ver.)
VCC = 5 V
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