AT90LS2343-4PI Atmel, AT90LS2343-4PI Datasheet - Page 45
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AT90LS2343-4PI
Manufacturer Part Number
AT90LS2343-4PI
Description
IC MCU 2K FLSH 4MHZ LV IT 8DIP
Manufacturer
Atmel
Series
AVR® 90LSr
Specifications of AT90LS2343-4PI
Core Processor
AVR
Core Size
8-Bit
Speed
4MHz
Connectivity
SPI
Peripherals
Brown-out Detect/Reset, POR, WDT
Number Of I /o
5
Program Memory Size
2KB (1K x 16)
Program Memory Type
FLASH
Eeprom Size
128 x 8
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 6 V
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
8-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Data Converters
-
Table 19. Low-voltage Serial Programming Instruction Set AT90S2323/2343
Notes:
1004D–09/01
Instruction
Programming
Enable
Chip Erase
Read Program
Memory
Write Program
Memory
Read
EEPROM Memory
Write
EEPROM Memory
Read Lock and
Fuse Bits
(AT90S/LS2323)
Read Lock and
Fuse Bits
(AT90S/LS2343)
Write Lock Bits
Write FSTRT Bit
(AT90S/LS2323)
Write RCEN Bit
(AT90S/LS2343)
Read Signature
Bytes
1. a = address high bits
2. When the state of the RCEN/FSTRT bit is changed, the device must be power cycled for the changes to have any effect.
3. The signature bytes are not readable in Lock mode 3, i.e., both Lock bits programmed.
b = address low bits
H = 0 – Low byte, 1 – High byte
o = data out
i = data in
x = don’t care
1 = lock bit 1
2 = lock bit 2
F = FSTRT Fuse
R = RCEN Fuse
S = SPIEN Fuse
1010 1100
1010 1100
0010 H000
0100 H000
1010 0000
1100 0000
0101 1000
0101 1000
1010 1100
1010 1100
1010 1100
0011 0000
Byte 1
0101 0011
100x xxxx
0000 00aa
0000 00aa
0000 0000
0000 0000
xxxx xxxx
xxxx xxxx
1111 1211
1011 111F
1011 111R
xxxx xxxx
Byte 2
Instruction Format
xxxx xxxx
xxxx xxxx
bbbb bbbb
bbbb bbbb
xbbb bbbb
xbbb bbbb
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxxx
xxxx xxbb
Byte 3
xxxx xxxx
xxxx xxxx
oooo oooo
iiii iiii
oooo oooo
iiii iiii
12Sx xxxF
12Sx xxxR
xxxx xxxx
xxxx xxxx
xxxx xxxx
oooo oooo
Byte 4
AT90S/LS2323/2343
Operation
Enable Serial programming while
RESET is low.
Chip erase both Flash and
EEPROM memory arrays.
Read H (high or low) data o from
program memory at word address
a:b.
Write H (high or low) data i to
program memory at word address
a:b.
Read data o from EEPROM
memory at address b.
Write data i to EEPROM memory at
address b.
Read Lock and Fuse bits.
“0” = programmed,
“1” = unprogrammed
Read Lock and Fuse bits.
“0” = programmed,
“1” = unprogrammed
Write Lock bits. Set bits 1,2 = “0” to
program Lock bits.
Write FSTRT fuse. Set bit F = “0” to
program, “1” to unprogram.
Write RCEN Fuse. Set bit R = ‘0’ to
program, ‘1’ to unprogram.
Read signature byte o from
address b.
(3)
(2)
(2)
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