DSPIC30F6011T-20I/PF Microchip Technology, DSPIC30F6011T-20I/PF Datasheet - Page 8
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DSPIC30F6011T-20I/PF
Manufacturer Part Number
DSPIC30F6011T-20I/PF
Description
IC DSPIC MCU/DSP 132K 64TQFP
Manufacturer
Microchip Technology
Series
dsPIC™ 30Fr
Datasheets
1.DSPIC30F2011-20ISO.pdf
(66 pages)
2.DSPIC30F5011T-20IPT.pdf
(34 pages)
3.DSPIC30F6010T-20IPF.pdf
(6 pages)
4.DSPIC30F6011T-20IPF.pdf
(12 pages)
5.DSPIC30F6011T-20IPF.pdf
(226 pages)
Specifications of DSPIC30F6011T-20I/PF
Core Processor
dsPIC
Core Size
16-Bit
Speed
20 MIPS
Connectivity
CAN, I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, LVD, POR, PWM, WDT
Number Of I /o
52
Program Memory Size
132KB (44K x 24)
Program Memory Type
FLASH
Eeprom Size
2K x 8
Ram Size
6K x 8
Voltage - Supply (vcc/vdd)
2.5 V ~ 5.5 V
Data Converters
A/D 16x12b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
64-TQFP, 64-VQFP
For Use With
XLT64PT4 - SOCKET TRAN ICE 64MQFP/TQFPAC164313 - MODULE SKT FOR PM3 64PFAC30F002 - MODULE SOCKET DSPIC30F 64TQFP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DSPIC30F6011T20IP
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DSPIC30F6011T-20I/PF
Manufacturer:
Microchip Technology
Quantity:
10 000
dsPIC30F6011/6012/6013/6014
14. Module: Data Converter Interface – Idle
15. Module: CAN – Read Operations on SFRs
EXAMPLE 14:
DS80183D-page 8
For this release of silicon, the DCI module should
not be stopped when the device enters Idle mode.
Work around
Do not set the DCISIDL (DCICON1<13>) bit. This
will ensure the DCI module continues to run when
the device enters Idle mode.
Data read from the CAN module Special Function
Registers (SFR) may not be correct at device
operation greater than 20 MIPS for V
range 4.75V to 5.5V (or 10 MIPS for V
range 3V to 3.6V).
If the dsPIC device needs to operate at a through-
put higher than 20 MIPS, the user should
incorporate the suggested workarounds while
reading CAN SFRs.
Applications that use Microchip’s dsPIC30F
Peripheral
CANbedded software, should operate the device
at 20 MIPS or lesser.
Work around
Work around 1: For Assembly Language
Source Code
When reading any CAN SFR, perform two consec-
utive read operations of that SFR. The work
around is demonstrated in Example 14. In this
example a memory-direct addressing mode is
used to read the SFR. The application may use
any addressing mode to perform the read opera-
tion. Note that interrupts must be disabled so that
the two consecutive reads do not get interrupted.
.include “p30f6014.inc”
....
disi
mov
mov
#1
C1RXF0SIDL, w0 ; first SFR read
C1RXF0SIDL, w0 ; second SFR read
Library
and
Vector
Informatik’s
Advance Information
DD
DD
in the
in the
16. Module: High I
Work around 2: For C Language Source Code
For C programmers, the MPLAB C30 v1.20.02
toolsuite provides a built-in function that may be
incorporated in the application source code. This
function may be used to read any CAN module
SFRs. Some examples of usage are shown in the
“readme.txt file” provided with the MPLAB C30
v1.20.02 toolsuite. The function has the following
prototype:
unsigned __builtin_readsfr(volatile void *);
The function argument is the address of a 16-bit
SFR. This function should only be used to read the
CAN special function registers.
This release of silicon draws a current (I
approximately 370 mA during any Row Erase
operation performed on Program Flash memory.
Work around
Work around 1:
Supply the V
capable of sourcing a minimum of 300 mA of
current.
Work around 2:
When using a voltage regulator capable of driving
150 mA current, and if Brown-out Reset (BOR) is
enabled for a V
then connect a 1000 µF Electrolytic capacitor
across the V
If the row erase operation is performed as part of a
Run Time Self Programming (RTSP) operation,
the user should ensure that the device is operating
at less than 10 MIPS prior to the erase operation.
To ensure the device is operating at less than 10
MIPS, the application may post-scale the system
clock or switch to the Internal FRC oscillator.
Program Flash Memory
DD
DD
pin and ground.
DD
DD
pin using a voltage regulator
2004 Microchip Technology Inc.
greater than or equal to 4.2V,
During Row Erase of
DD
) of