ATMEGA48V-10MI Atmel, ATMEGA48V-10MI Datasheet - Page 300

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ATMEGA48V-10MI

Manufacturer Part Number
ATMEGA48V-10MI
Description
IC AVR MCU 4K 5V 12MHZ 32-QFN
Manufacturer
Atmel
Series
AVR® ATmegar
Datasheets

Specifications of ATMEGA48V-10MI

Core Processor
AVR
Core Size
8-Bit
Speed
10MHz
Connectivity
I²C, SPI, UART/USART
Peripherals
Brown-out Detect/Reset, POR, PWM, WDT
Number Of I /o
23
Program Memory Size
4KB (2K x 16)
Program Memory Type
FLASH
Eeprom Size
256 x 8
Ram Size
512 x 8
Voltage - Supply (vcc/vdd)
1.8 V ~ 5.5 V
Data Converters
A/D 8x10b
Oscillator Type
Internal
Operating Temperature
-40°C ~ 85°C
Package / Case
32-VQFN Exposed Pad, 32-HVQFN, 32-SQFN, 32-DHVQFN
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
ATMEGA48V-12MI
ATMEGA48V-12MI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ATMEGA48V-10MI
Manufacturer:
ATMEL/爱特梅尔
Quantity:
20 000
Table 27-17. Serial Programming Instruction Set (Hexadecimal values) (Continued)
Notes:
Figure 27-8. Serial Programming Instruction example
300
Instruction/Operation
Write EEPROM Memory Page (page access)
Write Lock bits
Write Fuse bits
Write Fuse High bits
Write Extended Fuse Bits
1. Not all instructions are applicable for all parts.
2. a = address.
3. Bits are programmed ‘0’, unprogrammed ‘1’.
4. To ensure future compatibility, unused Fuses and Lock bits should be unprogrammed (‘1’) .
5. Refer to the correspondig section for Fuse and Lock bits, Calibration and Signature bytes and Page size.
6. Instructions accessing program memory use a word address. This word may be random within the page range.
7. See htt://www.atmel.com/avr for Application Notes regarding programming and programmers.
ATmega48/88/168
Byte 1
Load Program Memory Page (High/Low Byte)/
Load EEPROM Memory Page (page access)
Bit 15 B
Byte 2
Adr MSB
Adr dr M
A
r MS S B
If the LSB in RDY/BSY data byte out is ‘1’, a programming operation is still pending. Wait until
this bit returns ‘0’ before the next instruction is carried out.
Within the same page, the low data byte must be loaded prior to the high data byte.
After data is loaded to the page buffer, program the EEPROM page, see
300.
Byte 3
Adr LSB
Page Offset
0
Serial Programming Instruction
Byte 4
Byte 1
$C2
$AC
$AC
$AC
$AC
Program Memory/
EEPROM Memory
Page Buffer
Page N-1
Page 0
Page 1
Page 2
Byte 1
0000 00aa
Byte 2
$E0
$A0
$A8
$A4
Page Number
Instruction Format
Bit 15 B
Write Program Memory Page/
Write EEPROM Memory Page
Byte 2
Adr MSB
aaaa aa00
Byte 3
$00
$00
$00
$00
Byte 3
Adr LSB
A A dr dr LS
LSB
SB
Figure 27-8 on page
0
data byte in
data byte in
data byte in
data byte in
Byte 4
2545S–AVR–07/10
Byte 4
$00

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