MC68HC908JK3CP Freescale Semiconductor, MC68HC908JK3CP Datasheet - Page 41

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MC68HC908JK3CP

Manufacturer Part Number
MC68HC908JK3CP
Description
IC MCU 8MHZ 4K FLASH 20-DIP
Manufacturer
Freescale Semiconductor
Series
HC08r
Datasheet

Specifications of MC68HC908JK3CP

Core Processor
HC08
Core Size
8-Bit
Speed
8MHz
Peripherals
LED, LVD, POR, PWM
Number Of I /o
15
Program Memory Size
4KB (4K x 8)
Program Memory Type
FLASH
Ram Size
128 x 8
Voltage - Supply (vcc/vdd)
2.7 V ~ 3.3 V
Data Converters
A/D 12x8b
Oscillator Type
External
Operating Temperature
-40°C ~ 85°C
Package / Case
20-DIP (0.300", 7.62mm)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Eeprom Size
-
Connectivity
-

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MC68HC908JK3CP
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Company:
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4.5 FLASH Block Erase Operation
MC68H(R)C908JL3
Freescale Semiconductor
Rev. 1.1
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
Use the following procedure to erase a block of FLASH memory. A block
consists of 64 consecutive bytes starting from addresses $XX00,
$XX40, $XX80 or $XXC0. The 48-byte User Interrupt Vectors area also
forms a block. Any block within the 4K bytes User Memory area
($EC00–$FBFF) can be erased alone. The 48-byte User Interrupt Vector
blocks can not be erased alone due to security concern. Mass erase is
required to erase this block.
1. Set the ERASE bit and clear the MASS bit in the FLASH Control
2. Write any data to any FLASH location within the address range of
3. Wait for a time, t
4. Set the HVEN bit.
This read/write bit configures the memory for mass erase operation or
block erase operation when the ERASE bit is set.
This read/write bit configures the memory for erase operation. This bit
and the PGM bit should not be set to 1 at the same time.
This read/write bit configures the memory for program operation. This
bit and the ERASE bit should not be set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass Erase operation selected
0 = Block Erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Register.
the block to be erased.
FLASH Memory (FLASH)
nvs
(10µs).
FLASH Memory (FLASH)
Technical Data
41

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