COP8SDE9IMT9/NOPB National Semiconductor, COP8SDE9IMT9/NOPB Datasheet - Page 8

• Manufacturer Part Number: COP8SDE9IMT9/NOPB
• Description: IC MCU EEPROM 8BIT 8K 48-TSSOP
• Manufacturer: National Semiconductor
• Series: COP8™ 8Sr

Specifications of COP8SDE9IMT9/NOPB

• Core Processor: COP8
• Core Size: 8-Bit
• Speed: 20MHz
• Connectivity: Microwire/Plus (SPI), UART/USART
• Peripherals: POR, PWM, WDT
• Number Of I /o: 39
• Program Memory Size: 8KB (8K x 8)
• Program Memory Type: FLASH
• Ram Size: 256 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Oscillator Type: Internal
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 48-TSSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Eeprom Size: -
• Data Converters: -
• Other names: *COP8SDE9IMT9; *COP8SDE9IMT9/NOPB; COP8SDE9IMT9

www.national.com
Output Current Levels
B0-B3 Outputs
All Others
TRI-STATE Leakage
Maximum Input Current without Latchup (Note 5)
RAM Retention Voltage, V
Input Capacitance
Voltage on G6 to Force Execution from Boot
ROM(Note 8)
G6 Rise Time to Force Execution from Boot ROM
Input Current on G6 when Input
Flash Memory Data Retention
Flash Memory Number of Erase/Write Cycles
2.0 Electrical Characteristics
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Instruction Cycle Time (t
Flash Memory Page Erase Time
Flash Memory Mass Erase Time
Frequency of MICROWIRE/PLUS in
Slave Mode
MICROWIRE/PLUS Setup Time (t
MICROWIRE/PLUS Hold Time (t
MICROWIRE/PLUS Output Propagation
Delay (t
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode) (Note 7)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Source (Weak Pull-Up Mode)
Source (Push-Pull Mode)
Sink (Push-Pull Mode) (Note 7)
Allowable Sink and Source Current per Pin
Datasheet min/max specification limits are guaranteed by design, test, or statistical analysis.
Crystal/Resonator
UPD
)
Parameter
Parameter
C
R
)
TABLE 1. DC Electrical Characteristics (0˚C
(in HALT Mode)
>
UWH
V
UWS
CC
)
AC Electrical Characteristics (0˚C
)
4.5V
2.7V
See Table 14 , Typical
Flash Memory
Endurance
(Continued)
V
V
V
V
V
V
V
V
V
V
V
V
V
G6 rise time must be slower
than 100 ns
V
25˚C
See Table 14 , Typical Flash
Memory Endurance
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
IN
Conditions
V
V
= 11V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 4.5V, V
= 2.7V, V
= 5.5V
CC
CC
<
Conditions
5.5V
4.5V
8
CC
OH
OH
OH
OH
OL
OL
OH
OH
OH
OH
OL
OL
= 5.5V
= 0.3V
= 0.3V
= 1.0V
= 0.4V
= 3.8V
= 1.8V
= 4.2V
= 2.4V
= 3.8V
= 1.8V
= 3.8V
= 1.8V
T
T
A
A
Min
0.5
1.5
20
20
+70˚C) (Continued)
+70˚C)
2 x V
−0.5
Min
−10
−10
−10
100
3.5
2.0
−6
10
−5
−7
−4
10
-5
6
CC
Typ
1
8
Typ
500
100
10
5
Max
150
DC
DC
2
V
±
CC
Max
+0.5
20
15
200
7
+ 7
Units
MHz
ms
ms
µs
µs
ns
ns
ns
cycles
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
yrs
µA
µA
µA
µA
µA
pF
nS
µA
V
V